DOI: 10.1063/1.4902851. Understanding the early cycling evolution behaviors for phase change memory application

Understanding the early cycling evolution behaviors for phase change memory application

10.1063/1.4902851

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The RESET current of T-shaped phase change memory cells with 35 nm heating electrodes has been studied to understand the behavior of early cycling evolution. Results show that the RESET current has been significantly reduced after the early cycling evolution (1st RESET) operation. Compared the transmission electron microscope images, it is found that the hexagonal Ge2Sb2Te5 (GST) crystal grains are changed into the grains with face centered cubic structure after the early cycling evolution operation, which is taken as the major reason for the reduced RESET current, confirmed by a two-dimensional finite analysis and ab initio calculations.

Bibliography

Wang, Y., Chen, Y., Cai, D., Cheng, Y., Chen, X., Wang, Y., Xia, M., Zhou, M., Li, G., Zhang, Y., Gao, D., Song, Z., & Feng, G. (2014). Understanding the early cycling evolution behaviors for phase change memory application. Journal of Applied Physics, 116(20).

Authors 13

Yuchan Wang (first)
Yifeng Chen (additional)
Daolin Cai (additional)
Yan Cheng (additional)
Xiaogang Chen (additional)
Yueqing Wang (additional)
Mengjiao Xia (additional)
Mi Zhou (additional)
Gezi Li (additional)
Yiyun Zhang (additional)
Dan Gao (additional)
Zhitang Song (additional)
Gaoming Feng (additional)

References 16 Referenced 10

10.1103/PhysRevLett.21.1450 / Phys. Rev. Lett. (1968)
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10.1038/nmat2009 / Nat. Mater. (2007)
10.1126/science.1160231 / Science (2008)
10.1109/ISSCC.2012.6176872 / Solid-State Circuits Conference Digest of Technical Papers (ISSCC) (2012)
10.1145/1555754.1555760 (2009)
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10.1002/pssb.201200419 / Phys. Status Solidi B (2012)
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10.1038/srep00360 / Sci. Rep. (2012)
10.1038/ncomms5086 / Nat. Commun. (2014)
10.1126/science.1221561 / Science (2012)
10.1109/LED.2014.2308909 / IEEE Electron Device Lett. (2014)
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10.1063/1.2359354 / Appl. Phys. Lett. (2006)
10.1088/0957-4484/22/25/254005 / Nanotechnology (2011)

Dates

Type	When
Created	10 years, 8 months ago (Nov. 26, 2014, 3:04 p.m.)
Deposited	2 years, 1 month ago (June 25, 2023, 8:19 a.m.)
Indexed	3 weeks, 4 days ago (July 30, 2025, 7:04 a.m.)
Issued	10 years, 8 months ago (Nov. 26, 2014)
Published	10 years, 8 months ago (Nov. 26, 2014)
Published Online	10 years, 8 months ago (Nov. 26, 2014)
Published Print	10 years, 8 months ago (Nov. 28, 2014)

Funders 0

None

BibTeX

@article{Wang_2014, title={Understanding the early cycling evolution behaviors for phase change memory application}, volume={116}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.4902851}, DOI={10.1063/1.4902851}, number={20}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Wang, Yuchan and Chen, Yifeng and Cai, Daolin and Cheng, Yan and Chen, Xiaogang and Wang, Yueqing and Xia, Mengjiao and Zhou, Mi and Li, Gezi and Zhang, Yiyun and Gao, Dan and Song, Zhitang and Feng, Gaoming}, year={2014}, month=nov }

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