DOI: 10.1063/1.4901946. Trapped charge mapping in crystalline organic transistors by using scanning Kelvin probe force microscopy

Trapped charge mapping in crystalline organic transistors by using scanning Kelvin probe force microscopy

10.1063/1.4901946

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Trapped charge distributions at the interfaces between gate insulators and crystalline organic semiconductors in thin-film transistors are visualized by using a technique based on scanning Kelvin probe force microscopy (SKFM). For the charge density measurement, an ac voltage is applied to the gate electrode and its amplitude is adjusted so as to keep the electrostatic force constant between the SKFM tip and the semiconductor surface. The trapped charge density shows characteristic spatial distributions in the channel region, which varies by voltage stresses applied to the transistors. By comparing the charge distributions with the surface-potential profiles, trap mechanisms are discussed.

Bibliography

Ando, M., Heike, S., Kawasaki, M., & Hashizume, T. (2014). Trapped charge mapping in crystalline organic transistors by using scanning Kelvin probe force microscopy. Applied Physics Letters, 105(19).

Authors 4

Masahiko Ando (first)
Seiji Heike (additional)
Masahiro Kawasaki (additional)
Tomihiro Hashizume (additional)

References 24 Referenced 14

10.1038/nature10313 / Nature (2011)
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10.1016/j.synthmet.2004.08.009 / Synth. Met. (2004)
10.1063/1.1611278 / Appl. Phys. Lett. (2003)
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10.1002/adma.200401174 / Adv. Mater. (2005)
10.1021/jp073626l / J. Phys. Chem. B (2007)
10.1063/1.2737419 / Appl. Phys. Lett. (2007)
10.1002/adfm.200800009 / Adv. Funct. Mater. (2008)
10.1103/PhysRevLett.103.256803 / Phys. Rev. Lett. (2009)
10.1109/TED.2005.864371 / IEEE Trans. Electron Devices (2006)
10.1063/1.2992031 / Appl. Phys. Lett. (2008)
10.1088/0957-4484/20/2/025203 / Nanotechnology (2009)
10.1039/b902880c / J. Mater. Chem. (2009)
10.1016/j.orgel.2008.10.005 / Org. Electron. (2009)
10.1021/cm801689f / Chem. Mater. (2008)
10.1103/PhysRevB.88.205208 / Phys. Rev. B (2013)
10.1063/1.2146059 / Appl. Phys. Lett. (2005)
10.1002/adma.200702688 / Adv. Mater. (2008)
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Dates

Type	When
Created	10 years, 9 months ago (Nov. 13, 2014, 8:30 p.m.)
Deposited	2 years, 1 month ago (July 16, 2023, 12:48 a.m.)
Indexed	3 weeks, 5 days ago (July 30, 2025, 7:04 a.m.)
Issued	10 years, 9 months ago (Nov. 10, 2014)
Published	10 years, 9 months ago (Nov. 10, 2014)
Published Online	10 years, 9 months ago (Nov. 13, 2014)
Published Print	10 years, 9 months ago (Nov. 10, 2014)

Funders 0

None

BibTeX

@article{Ando_2014, title={Trapped charge mapping in crystalline organic transistors by using scanning Kelvin probe force microscopy}, volume={105}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.4901946}, DOI={10.1063/1.4901946}, number={19}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ando, Masahiko and Heike, Seiji and Kawasaki, Masahiro and Hashizume, Tomihiro}, year={2014}, month=nov }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        30
      ]
    ],
    "date-time": "2025-07-30T11:04:29Z",
    "timestamp": 1753873469903,
    "version": "3.41.2"
  },
  "reference-count": 24,
  "publisher": "AIP Publishing",
  "issue": "19",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2014,
        11,
        10
      ]
    ]
  },
  "abstract": "<jats:p>Trapped charge distributions at the interfaces between gate insulators and crystalline organic semiconductors in thin-film transistors are visualized by using a technique based on scanning Kelvin probe force microscopy (SKFM). For the charge density measurement, an ac voltage is applied to the gate electrode and its amplitude is adjusted so as to keep the electrostatic force constant between the SKFM tip and the semiconductor surface. The trapped charge density shows characteristic spatial distributions in the channel region, which varies by voltage stresses applied to the transistors. By comparing the charge distributions with the surface-potential profiles, trap mechanisms are discussed.</jats:p>",
  "DOI": "10.1063/1.4901946",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2014,
        11,
        14
      ]
    ],
    "date-time": "2014-11-14T01:30:49Z",
    "timestamp": 1415928649000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 14,
  "title": "Trapped charge mapping in crystalline organic transistors by using scanning Kelvin probe force microscopy",
  "prefix": "10.1063",
  "volume": "105",
  "author": [
    {
      "given": "Masahiko",
      "family": "Ando",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Central Research Laboratory, Hitachi, Ltd. 1 , 7-1-1 Omika, Hitachi, Ibaraki 312-1292, Japan"
        }
      ]
    },
    {
      "given": "Seiji",
      "family": "Heike",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Central Research Laboratory, Hitachi, Ltd. 2 , 2520 Akanuma, Hatoyama, Saitama 350-0395, Japan"
        }
      ]
    },
    {
      "given": "Masahiro",
      "family": "Kawasaki",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Hitachi Research Laboratory, Hitachi, Ltd. 3 , 7-1-1 Omika, Hitachi, Ibaraki 312-1292, Japan"
        }
      ]
    },
    {
      "given": "Tomihiro",
      "family": "Hashizume",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Central Research Laboratory, Hitachi, Ltd. 2 , 2520 Akanuma, Hatoyama, Saitama 350-0395, Japan"
        },
        {
          "name": "Tokyo Institute of Technology 4 Department of Physics, , 2-12-1 Oh-okayama, Meguro, Tokyo 152-8551, Japan"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2014,
        11,
        13
      ]
    ]
  },
  "reference": [
    {
      "key": "2023071604482437900_c1",
      "doi-asserted-by": "publisher",
      "first-page": "364",
      "DOI": "10.1038/nature10313",
      "volume": "475",
      "year": "2011",
      "journal-title": "Nature"
    },
    {
      "key": "2023071604482437900_c2",
      "doi-asserted-by": "publisher",
      "first-page": "3005",
      "DOI": "10.1038/ncomms4005",
      "volume": "5",
      "year": "2014",
      "journal-title": "Nat. Commun."
    },
    {
      "key": "2023071604482437900_c3",
      "doi-asserted-by": "publisher",
      "first-page": "3859",
      "DOI": "10.1002/adma.200901136",
      "volume": "21",
      "year": "2009",
      "journal-title": "Adv. Mater."
    },
    {
      "key": "2023071604482437900_c4",
      "doi-asserted-by": "publisher",
      "first-page": "2921",
      "DOI": "10.1063/1.105227",
      "volume": "58",
      "year": "1991",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023071604482437900_c5",
      "doi-asserted-by": "publisher",
      "first-page": "6129",
      "DOI": "10.1063/1.1613369",
      "volume": "94",
      "year": "2003",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023071604482437900_c6",
      "doi-asserted-by": "publisher",
      "first-page": "297",
      "DOI": "10.1016/j.synthmet.2004.08.009",
      "volume": "146",
      "year": "2004",
      "journal-title": "Synth. Met."
    },
    {
      "key": "2023071604482437900_c7",
      "doi-asserted-by": "publisher",
      "first-page": "2366",
      "DOI": "10.1063/1.1611278",
      "volume": "83",
      "year": "2003",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023071604482437900_c8",
      "doi-asserted-by": "publisher",
      "first-page": "5539",
      "DOI": "10.1063/1.1637443",
      "volume": "83",
      "year": "2003",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023071604482437900_c9",
      "doi-asserted-by": "publisher",
      "first-page": "1410",
      "DOI": "10.1002/adma.200401174",
      "volume": "17",
      "year": "2005",
      "journal-title": "Adv. Mater."
    },
    {
      "key": "2023071604482437900_c10",
      "doi-asserted-by": "publisher",
      "first-page": "7711",
      "DOI": "10.1021/jp073626l",
      "volume": "111",
      "year": "2007",
      "journal-title": "J. Phys. Chem. B"
    },
    {
      "key": "2023071604482437900_c11",
      "doi-asserted-by": "publisher",
      "first-page": "192104",
      "DOI": "10.1063/1.2737419",
      "volume": "90",
      "year": "2007",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023071604482437900_c12",
      "doi-asserted-by": "publisher",
      "first-page": "3907",
      "DOI": "10.1002/adfm.200800009",
      "volume": "18",
      "year": "2008",
      "journal-title": "Adv. Funct. Mater."
    },
    {
      "key": "2023071604482437900_c13",
      "doi-asserted-by": "publisher",
      "first-page": "256803",
      "DOI": "10.1103/PhysRevLett.103.256803",
      "volume": "103",
      "year": "2009",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2023071604482437900_c14",
      "doi-asserted-by": "publisher",
      "first-page": "435",
      "DOI": "10.1109/TED.2005.864371",
      "volume": "53",
      "year": "2006",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2023071604482437900_c15",
      "doi-asserted-by": "publisher",
      "first-page": "133303",
      "DOI": "10.1063/1.2992031",
      "volume": "93",
      "year": "2008",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023071604482437900_c16",
      "doi-asserted-by": "publisher",
      "first-page": "025203",
      "DOI": "10.1088/0957-4484/20/2/025203",
      "volume": "20",
      "year": "2009",
      "journal-title": "Nanotechnology"
    },
    {
      "key": "2023071604482437900_c17",
      "doi-asserted-by": "publisher",
      "first-page": "6116",
      "DOI": "10.1039/b902880c",
      "volume": "19",
      "year": "2009",
      "journal-title": "J. Mater. Chem."
    },
    {
      "key": "2023071604482437900_c18",
      "doi-asserted-by": "publisher",
      "first-page": "107",
      "DOI": "10.1016/j.orgel.2008.10.005",
      "volume": "10",
      "year": "2009",
      "journal-title": "Org. Electron."
    },
    {
      "key": "2023071604482437900_c19",
      "doi-asserted-by": "publisher",
      "first-page": "7252",
      "DOI": "10.1021/cm801689f",
      "volume": "20",
      "year": "2008",
      "journal-title": "Chem. Mater."
    },
    {
      "key": "2023071604482437900_c20",
      "doi-asserted-by": "publisher",
      "first-page": "205208",
      "DOI": "10.1103/PhysRevB.88.205208",
      "volume": "88",
      "year": "2013",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023071604482437900_c21",
      "doi-asserted-by": "publisher",
      "first-page": "243512",
      "DOI": "10.1063/1.2146059",
      "volume": "87",
      "year": "2005",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023071604482437900_c22",
      "doi-asserted-by": "publisher",
      "first-page": "975",
      "DOI": "10.1002/adma.200702688",
      "volume": "20",
      "year": "2008",
      "journal-title": "Adv. Mater."
    },
    {
      "key": "2023071604482437900_c23",
      "doi-asserted-by": "publisher",
      "first-page": "194",
      "DOI": "10.1038/nature03376",
      "volume": "434",
      "year": "2005",
      "journal-title": "Nature"
    },
    {
      "volume-title": "Adv. Mater.",
      "key": "2023071604482437900_c24",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adma.201403556"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.4901946/13805214/193303_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.4901946/13805214/193303_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        7,
        16
      ]
    ],
    "date-time": "2023-07-16T04:48:31Z",
    "timestamp": 1689482911000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/105/19/193303/596519/Trapped-charge-mapping-in-crystalline-organic"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2014,
        11,
        10
      ]
    ]
  },
  "references-count": 24,
  "journal-issue": {
    "issue": "19",
    "published-print": {
      "date-parts": [
        [
          2014,
          11,
          10
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.4901946",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2014,
        11,
        10
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2014,
        11,
        10
      ]
    ]
  },
  "article-number": "193303"
}