DOI: 10.1063/1.4895801. Short-range ordering of ion-implanted nitrogen atoms in SiC-graphene

Short-range ordering of ion-implanted nitrogen atoms in SiC-graphene

10.1063/1.4895801

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We perform a structural analysis of nitrogen-doped graphene on SiC(0001) prepared by ultra low-energy ion bombardment. Using scanning tunneling microscopy, we show that nitrogen atoms are incorporated almost exclusively as graphitic substitution in the graphene honeycomb lattice. With an irradiation energy of 25 eV and a fluence of approximately 5 × 1014 cm−2, we achieve a nitrogen content of around 1%. By quantitatively comparing the position of the N-atoms in the topography measurements with simulated random distributions, we find statistically significant short-range correlations. Consequently, we are able to show that the dopants arrange preferably at lattice sites given by the 6 × 6-reconstruction of the underlying substrate. This selective incorporation is most likely triggered by adsorbate layers present during the ion bombardment. This study identifies low-energy ion irradiation as a promising method for controlled doping in epitaxial graphene.

Bibliography

Willke, P., Amani, J. A., Thakur, S., Weikert, S., Druga, T., Maiti, K., HofsÃ¤ss, H., & Wenderoth, M. (2014). Short-range ordering of ion-implanted nitrogen atoms in SiC-graphene. Applied Physics Letters, 105(11).

Authors 8

P. Willke (first)
J. A. Amani (additional)
S. Thakur (additional)
S. Weikert (additional)
T. Druga (additional)
K. Maiti (additional)
H. Hofsäss (additional)
M. Wenderoth (additional)

References 33 Referenced 27

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See supplementary material at http://dx.doi.org/10.1063/1.4895801 for the simulation of the implantation process. (10.1063/1.4895801)
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Dates

Type	When
Created	10 years, 11 months ago (Sept. 17, 2014, 8:30 p.m.)
Deposited	2 years, 2 months ago (June 24, 2023, 10:28 p.m.)
Indexed	1 month ago (July 30, 2025, 7:04 a.m.)
Issued	10 years, 11 months ago (Sept. 15, 2014)
Published	10 years, 11 months ago (Sept. 15, 2014)
Published Online	10 years, 11 months ago (Sept. 17, 2014)
Published Print	10 years, 11 months ago (Sept. 15, 2014)

Funders 2

India office, University of Gottingen, Germany
Deutsche Forschungsgemeinschaft (DFG) 10.13039/501100001659 Deutsche Forschungsgemeinschaft
Region: Europe
gov (National government)
Labels3
1. German Research Association
2. German Research Foundation
3. DFG
Awards2
1. HO1125/21-1
2. 1459

BibTeX

@article{Willke_2014, title={Short-range ordering of ion-implanted nitrogen atoms in SiC-graphene}, volume={105}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.4895801}, DOI={10.1063/1.4895801}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Willke, P. and Amani, J. A. and Thakur, S. and Weikert, S. and Druga, T. and Maiti, K. and Hofsäss, H. and Wenderoth, M.}, year={2014}, month=sep }

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