Abstract
The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorganic vdW heterostructures prepared by co-lamination and restacking; and organic-inorganic hetero-epitaxy created by physical vapor deposition of organic molecule crystals on an inorganic vdW substrate. Both types of heterostructures exhibit atomically clean vdW interfaces. Employing such vdW heterostructures, we have demonstrated various novel devices, including graphene/hexagonal boron nitride (hBN) and MoS2 heterostructures for memory devices; graphene/MoS2/WSe2/graphene vertical p-n junctions for photovoltaic devices, and organic crystals on hBN with graphene electrodes for high-performance transistors.
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Dates
Type | When |
---|---|
Created | 10 years, 11 months ago (Sept. 3, 2014, 9:06 a.m.) |
Deposited | 2 months, 3 weeks ago (May 29, 2025, 3:29 p.m.) |
Indexed | 3 weeks, 2 days ago (July 30, 2025, 7:03 a.m.) |
Issued | 10 years, 11 months ago (Sept. 1, 2014) |
Published | 10 years, 11 months ago (Sept. 1, 2014) |
Published Online | 10 years, 11 months ago (Sept. 2, 2014) |
Published Print | 10 years, 11 months ago (Sept. 1, 2014) |
Funders
1
NSF
10.13039/100000001
National Science FoundationRegion: Americas
gov (National government)
Labels
4
- U.S. National Science Foundation
- NSF
- US NSF
- USA NSF
Awards
1
- DMR-1124894
@article{Lee_2014, title={Heterostructures based on inorganic and organic van der Waals systems}, volume={2}, ISSN={2166-532X}, url={http://dx.doi.org/10.1063/1.4894435}, DOI={10.1063/1.4894435}, number={9}, journal={APL Materials}, publisher={AIP Publishing}, author={Lee, Gwan-Hyoung and Lee, Chul-Ho and van der Zande, Arend M. and Han, Minyong and Cui, Xu and Arefe, Ghidewon and Nuckolls, Colin and Heinz, Tony F. and Hone, James and Kim, Philip}, year={2014}, month=sep }