DOI: 10.1063/1.4887066. Temperature-dependent energy storage properties of antiferroelectric Pb0.96La0.04Zr0.98Ti0.02O3 thin films

Temperature-dependent energy storage properties of antiferroelectric Pb0.96La0.04Zr0.98Ti0.02O3 thin films

10.1063/1.4887066

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The energy storage properties of antiferroelectric (AFE) Pb0.96La0.04Zr0.98Ti0.02O3 (PLZT 4/98/2) thin films were investigated as a function of temperature and applied electric field. The results indicated that recoverable energy density (Ure) and charge-discharge efficiency (η) of PLZT (4/98/2) depend weakly on temperature (from room temperature to 225 °C), while Ure increases linearly and η decreases exponentially with increasing electric field at room temperature. These findings are explained qualitatively on the basis of the kinetics of the temperature-induced transition of AFE-to-paraelectric phase and the field-induced transition of AFE-to-ferroelectric phase, respectively. The high Ure (≈61 J/cm3) and low leakage current density (≈3.5 × 10−8 and 3.5 × 10−5 A/cm2 at 25 and 225 °C, respectively) indicate that antiferroelectric PLZT (4/98/2) is a promising material for high-power energy storage.

Bibliography

Hu, Z., Ma, B., Koritala, R. E., & Balachandran, U. (2014). Temperature-dependent energy storage properties of antiferroelectric Pb0.96La0.04Zr0.98Ti0.02O3 thin films. Applied Physics Letters, 104(26).

Authors 4

Zhongqiang Hu (first)
Beihai Ma (additional)
R. E. Koritala (additional)
Uthamalingam Balachandran (additional)

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Dates

Type	When
Created	11 years, 1 month ago (July 2, 2014, 8:30 p.m.)
Deposited	2 years ago (Aug. 4, 2023, 1:56 a.m.)
Indexed	3 weeks, 4 days ago (July 30, 2025, 7:03 a.m.)
Issued	11 years, 1 month ago (June 30, 2014)
Published	11 years, 1 month ago (June 30, 2014)
Published Online	11 years, 1 month ago (July 2, 2014)
Published Print	11 years, 1 month ago (June 30, 2014)

Funders 0

None

BibTeX

@article{Hu_2014, title={Temperature-dependent energy storage properties of antiferroelectric Pb0.96La0.04Zr0.98Ti0.02O3 thin films}, volume={104}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.4887066}, DOI={10.1063/1.4887066}, number={26}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hu, Zhongqiang and Ma, Beihai and Koritala, R. E. and Balachandran, Uthamalingam}, year={2014}, month=jun }

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  "abstract": "<jats:p>The energy storage properties of antiferroelectric (AFE) Pb0.96La0.04Zr0.98Ti0.02O3 (PLZT 4/98/2) thin films were investigated as a function of temperature and applied electric field. The results indicated that recoverable energy density (Ure) and charge-discharge efficiency (\u03b7) of PLZT (4/98/2) depend weakly on temperature (from room temperature to 225\u2009\u00b0C), while Ure increases linearly and \u03b7 decreases exponentially with increasing electric field at room temperature. These findings are explained qualitatively on the basis of the kinetics of the temperature-induced transition of AFE-to-paraelectric phase and the field-induced transition of AFE-to-ferroelectric phase, respectively. The high Ure (\u224861\u2009J/cm3) and low leakage current density (\u22483.5\u2009\u00d7\u200910\u22128 and 3.5\u2009\u00d7\u200910\u22125 A/cm2 at 25 and 225\u2009\u00b0C, respectively) indicate that antiferroelectric PLZT (4/98/2) is a promising material for high-power energy storage.</jats:p>",
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