Abstract
In this paper, using a resonance-enhanced piezoresponse force microscopy approach supported by density functional theory computer simulations, we have demonstrated the ferroelectric switching in epitaxial GeTe films. It has been shown that in films with thickness on the order of several nanometers reversible reorientation of polarization occurs due to swapping of the shorter and longer Ge-Te bonds in the interior of the material. It is also hinted that for ultra thin films consisting of just several atomic layers weakly bonded to the substrate, ferroelectric switching may proceed through exchange of Ge and Te planes within individual GeTe layers.
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Dates
Type | When |
---|---|
Created | 11 years, 2 months ago (June 6, 2014, 8:30 p.m.) |
Deposited | 2 months, 3 weeks ago (May 29, 2025, 3:29 p.m.) |
Indexed | 2 weeks, 5 days ago (Aug. 2, 2025, 12:50 a.m.) |
Issued | 11 years, 2 months ago (June 1, 2014) |
Published | 11 years, 2 months ago (June 1, 2014) |
Published Online | 11 years, 2 months ago (June 6, 2014) |
Published Print | 11 years, 2 months ago (June 1, 2014) |
Funders
1
National Science Foundation
10.13039/100000001
Region: Americas
gov (National government)
Labels
4
- U.S. National Science Foundation
- NSF
- US NSF
- USA NSF
Awards
1
- 0820521
@article{Kolobov_2014, title={Ferroelectric switching in epitaxial GeTe films}, volume={2}, ISSN={2166-532X}, url={http://dx.doi.org/10.1063/1.4881735}, DOI={10.1063/1.4881735}, number={6}, journal={APL Materials}, publisher={AIP Publishing}, author={Kolobov, A. V. and Kim, D. J. and Giussani, A. and Fons, P. and Tominaga, J. and Calarco, R. and Gruverman, A.}, year={2014}, month=jun }