Abstract
As device miniaturization approaches nanoscale dimensions, interfaces begin to dominate electrical properties. Here the system archetype Au/SrTiO3 is used to examine the origin of size dependent transport properties along metal-oxide interfaces. We demonstrate that a transition between two classes of size dependent electronic transport mechanisms exists, defined by a critical size ε. At sizes larger than ε an edge-related tunneling effect proportional to 1/D (the height of the supported Au nanoparticle) is observed; interfaces with sizes smaller than ε exhibit random fluctuations in current. The ability to distinguish between these mechanisms is important to future developments in nanoscale device design.
References
35
Referenced
13
10.1038/29954
/ Nature (1998)10.1021/nl025875l
/ Nano Lett. (2003)10.1016/0009-2614(74)85031-1
/ Chem. Phys. Lett. (1974)10.1021/nn900336j
/ ACS Nano (2009)10.1002/adma.200900375
/ Adv. Mater. (2009)10.1038/nmat2023
/ Nat. Mater. (2007)10.1088/0957-4484/22/25/254002
/ Nanotechnology (2011)10.1016/S1359-6454(98)80007-4
/ Acta Mater. (1998)10.1103/PhysRevB.55.9792
/ Phys. Rev. B (1997)10.1063/1.3100212
/ J. Appl. Phys. (2009)10.1021/nl903651p
/ Nano Lett. (2010)10.1103/PhysRevLett.97.026804
/ Phys. Rev. Lett. (2006)10.1038/nnano.2011.196
/ Nat. Nanotechnol. (2011)10.1021/nl049659j
/ Nano Lett. (2004)10.1038/nnano.2008.160
/ Nat. Nanotechnol. (2008)10.1063/1.347239
/ J. Appl. Phys. (1991)10.1016/S0169-4332(97)80114-6
/ Appl. Surf. Sci. (1997)10.1063/1.370539
/ J. Appl. Phys. (1999)10.1063/1.1521251
/ Appl. Phys. Lett. (2002)10.1016/S0039-6028(98)00363-X
/ Surf. Sci. (1998)10.1016/S0039-6028(02)01692-8
/ Surf. Sci. (2002)10.1016/j.surfrep.2007.07.001
/ Surf. Sci. Rep. (2007)10.1103/PhysRevB.75.165101
/ Phys. Rev. B (2007)10.1557/jmr.2007.0014
/ J. Mater. Res. (2007){'key': '2023061714581718300_c25', 'first-page': '89', 'volume-title': 'Metal-Semiconductor Contacts', 'year': '1988', 'edition': '2nd ed.'}
/ Metal-Semiconductor Contacts (1988)10.1016/S0927-796X(01)00037-7
/ Mater. Sci. Eng. R (2001){'key': '2023061714581718300_c27', 'first-page': '134', 'volume-title': 'Physics of Semiconductor Devices', 'year': '2007', 'edition': '3rd ed.'}
/ Physics of Semiconductor Devices (2007)10.1016/0167-5729(82)90001-2
/ Surf. Sci. Rep. (1982)10.1016/j.physb.2009.04.012
/ Physica B (2009)10.1016/j.jcat.2004.03.036
/ J. Catal. (2004)10.1063/1.347243
/ J. Appl. Phys. (1991)10.1143/JJAP.50.124302
/ Jpn. J. Appl. Phys. (2011)10.1016/0038-1101(81)90109-X
/ Solid-State Electron. (1981)10.1103/PhysRevB.45.13509
/ Phys. Rev. B (1992)- See supplementary material at http://dx.doi.org/10.1063/1.4851937 for the Ohmic Al/STO contact, interfacial area, fitting details, and transport current calculations.
Dates
Type | When |
---|---|
Created | 11 years, 8 months ago (Dec. 18, 2013, 7:32 p.m.) |
Deposited | 2 years, 2 months ago (June 17, 2023, 10:58 a.m.) |
Indexed | 1 month, 1 week ago (July 30, 2025, 7:02 a.m.) |
Issued | 11 years, 8 months ago (Dec. 16, 2013) |
Published | 11 years, 8 months ago (Dec. 16, 2013) |
Published Online | 11 years, 8 months ago (Dec. 18, 2013) |
Published Print | 11 years, 8 months ago (Dec. 16, 2013) |
@article{Hou_2013, title={A transition in mechanisms of size dependent electrical transport at nanoscale metal-oxide interfaces}, volume={103}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.4851937}, DOI={10.1063/1.4851937}, number={25}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hou, Jiechang and Nonnenmann, Stephen S. and Qin, Wei and Bonnell, Dawn A.}, year={2013}, month=dec }