DOI: 10.1063/1.4837455. Atomistic full-band simulations of monolayer MoS<sub>2</sub> transistors

Atomistic full-band simulations of monolayer MoS2 transistors

10.1063/1.4837455

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Bibliography

Chang, J., Register, L. F., & Banerjee, S. K. (2013). Atomistic full-band simulations of monolayer MoS2 transistors. Applied Physics Letters, 103(22), 223509.

Authors 3

Jiwon Chang (first)
Leonard F. Register (additional)
Sanjay K. Banerjee (additional)

References 22 Referenced 51

10.1073/pnas.0502848102
10.1103/PhysRevLett.105.136805
10.1021/nl903868w
10.1038/nnano.2010.279
10.1109/LED.2012.2184520
10.1021/nl303583v
10.1021/nl302015v
10.1021/nn203715c
10.1021/nl2018178
M. Salmani-Jelodar, Y. Tan, and G. Klimeck, in International Semiconductor Device Research Symposium, College Park, MD, USA, December (IEEE, 2011).
10.1016/j.physb.2012.08.034
10.1103/PhysRevB.72.045121
10.1103/PhysRevB.43.1993
10.1103/PhysRevB.67.155108
10.1103/PhysRevB.79.115409
10.1103/PhysRevB.84.045409
10.1109/TED.2011.2159221
10.1103/PhysRevB.45.13244
10.1103/PhysRevB.64.235305
10.1063/1.3672219
10.1103/PhysRevB.52.8244
10.1103/PhysRevB.79.235118

Dates

Type	When
Created	11 years, 8 months ago (Nov. 26, 2013, 6:27 p.m.)
Deposited	2 years, 4 months ago (April 20, 2023, 12:27 a.m.)
Indexed	2 months, 1 week ago (June 17, 2025, 9:34 p.m.)
Issued	11 years, 9 months ago (Nov. 25, 2013)
Published	11 years, 9 months ago (Nov. 25, 2013)
Published Print	11 years, 9 months ago (Nov. 25, 2013)

Funders 0

None

BibTeX

@article{Chang_2013, title={Atomistic full-band simulations of monolayer MoS2 transistors}, volume={103}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.4837455}, DOI={10.1063/1.4837455}, number={22}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chang, Jiwon and Register, Leonard F. and Banerjee, Sanjay K.}, year={2013}, month=nov, pages={223509} }

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