DOI: 10.1063/1.4825336. Effect of residual stress on energy storage property in PbZrO3 antiferroelectric thin films with different orientations

Effect of residual stress on energy storage property in PbZrO3 antiferroelectric thin films with different orientations

10.1063/1.4825336

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The effect of residual stress on energy storage property was investigated for a series of PbZrO3 thin films on SrTiO3 and Si substrates. Compressive or tensile residual stress influences the critical electric field EA for the ferroelectric-to-antiferroelectric phase transition, thus for films with (110)/(101) orientation, energy density W of films on SrTiO3 is 38% larger than films on Si; in contrast, (001)-oriented PbZrO3 films on SrTiO3 show slightly smaller W compared to films on Si. We conclude that the different responses of W to stress are related to the different constrain states in films with different orientations.

Bibliography

Ge, J., Remiens, D., Costecalde, J., Chen, Y., Dong, X., & Wang, G. (2013). Effect of residual stress on energy storage property in PbZrO3 antiferroelectric thin films with different orientations. Applied Physics Letters, 103(16).

Authors 6

Jun Ge (first)
Denis Remiens (additional)
Jean Costecalde (additional)
Ying Chen (additional)
Xianlin Dong (additional)
Genshui Wang (additional)

References 20 Referenced 52

10.1109/TUFFC.2011.2039 / IEEE Trans. Ultrason. Ferroelectr. Freq. Control (2011)
10.1063/1.4772016 / Appl. Phys. Lett. (2012)
10.1063/1.2928230 / Appl. Phys. Lett. (2008)
10.1557/jmr.2009.0349 / J. Mater. Res. (2009)
10.1111/j.1551-2916.2009.03015.x / J. Am. Ceram. Soc. (2009)
10.1063/1.3497193 / Appl. Phys. Lett. (2010)
10.1111/j.1551-2916.2011.04814.x / J. Am. Ceram. Soc. (2011)
10.1063/1.4802794 / Appl. Phys. Lett. (2013)
10.1111/j.1551-2916.2011.04460.x / J. Am. Ceram. Soc. (2011)
10.1557/jmr.2012.124 / J. Mater. Res. (2012)
10.1063/1.4801517 / Appl. Phys. Lett. (2013)
10.1103/PhysRevB.81.014103 / Phys. Rev. B (2010)
10.1063/1.4790135 / J. Appl. Phys. (2013)
10.1063/1.372211 / J. Appl. Phys. (2000)
10.1023/A:1026775701354 / J. Mater. Sci. (2000)
10.1016/j.jcrysgro.2009.05.025 / J. Cryst. Growth (2009)
See supplementary material at http://dx.doi.org/10.1063/1.4825336 for detailed information of structure property. (10.1063/1.4825336)
10.1063/1.3669527 / Appl. Phys. Lett. (2011)
10.1063/1.369744 / J. Appl. Phys. (1999)
10.1063/1.2740171 / Appl. Phys. Lett. (2007)

Dates

Type	When
Created	11 years, 10 months ago (Oct. 16, 2013, 6:14 p.m.)
Deposited	2 years, 2 months ago (June 17, 2023, 10:50 a.m.)
Indexed	3 weeks, 1 day ago (July 30, 2025, 7:01 a.m.)
Issued	11 years, 10 months ago (Oct. 14, 2013)
Published	11 years, 10 months ago (Oct. 14, 2013)
Published Online	11 years, 10 months ago (Oct. 16, 2013)
Published Print	11 years, 10 months ago (Oct. 14, 2013)

Funders 0

None

BibTeX

@article{Ge_2013, title={Effect of residual stress on energy storage property in PbZrO3 antiferroelectric thin films with different orientations}, volume={103}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.4825336}, DOI={10.1063/1.4825336}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ge, Jun and Remiens, Denis and Costecalde, Jean and Chen, Ying and Dong, Xianlin and Wang, Genshui}, year={2013}, month=oct }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        30
      ]
    ],
    "date-time": "2025-07-30T11:01:28Z",
    "timestamp": 1753873288761,
    "version": "3.41.2"
  },
  "reference-count": 20,
  "publisher": "AIP Publishing",
  "issue": "16",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2013,
        10,
        14
      ]
    ]
  },
  "abstract": "<jats:p>The effect of residual stress on energy storage property was investigated for a series of PbZrO3 thin films on SrTiO3 and Si substrates. Compressive or tensile residual stress influences the critical electric field EA for the ferroelectric-to-antiferroelectric phase transition, thus for films with (110)/(101) orientation, energy density W of films on SrTiO3 is 38% larger than films on Si; in contrast, (001)-oriented PbZrO3 films on SrTiO3 show slightly smaller W compared to films on Si. We conclude that the different responses of W to stress are related to the different constrain states in films with different orientations.</jats:p>",
  "DOI": "10.1063/1.4825336",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2013,
        10,
        16
      ]
    ],
    "date-time": "2013-10-16T22:14:32Z",
    "timestamp": 1381961672000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 52,
  "title": "Effect of residual stress on energy storage property in PbZrO3 antiferroelectric thin films with different orientations",
  "prefix": "10.1063",
  "volume": "103",
  "author": [
    {
      "given": "Jun",
      "family": "Ge",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences 1 , 1295 Dingxi Road, Shanghai 200050, People's Republic of China"
        }
      ]
    },
    {
      "given": "Denis",
      "family": "Remiens",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "IEMN-DOAE-MIMM, CNRS UMR 8520, Universit\u00e9 de Valenciennes et du Hainaut Cambr\u00e9sis 2 , 59313 Valenciennes Cedex 9, Cit\u00e9 scientifique, 59655 Villeneuve-d'Ascq Cedex, France"
        }
      ]
    },
    {
      "given": "Jean",
      "family": "Costecalde",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "IEMN-DOAE-MIMM, CNRS UMR 8520, Universit\u00e9 de Valenciennes et du Hainaut Cambr\u00e9sis 2 , 59313 Valenciennes Cedex 9, Cit\u00e9 scientifique, 59655 Villeneuve-d'Ascq Cedex, France"
        }
      ]
    },
    {
      "given": "Ying",
      "family": "Chen",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences 1 , 1295 Dingxi Road, Shanghai 200050, People's Republic of China"
        }
      ]
    },
    {
      "given": "Xianlin",
      "family": "Dong",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences 1 , 1295 Dingxi Road, Shanghai 200050, People's Republic of China"
        }
      ]
    },
    {
      "given": "Genshui",
      "family": "Wang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences 1 , 1295 Dingxi Road, Shanghai 200050, People's Republic of China"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2013,
        10,
        16
      ]
    ]
  },
  "reference": [
    {
      "issue": "9",
      "key": "2023061714504780800_c1",
      "doi-asserted-by": "publisher",
      "first-page": "1968",
      "DOI": "10.1109/TUFFC.2011.2039",
      "volume": "58",
      "year": "2011",
      "journal-title": "IEEE Trans. Ultrason. Ferroelectr. Freq. Control"
    },
    {
      "issue": "24",
      "key": "2023061714504780800_c2",
      "doi-asserted-by": "publisher",
      "first-page": "242909",
      "DOI": "10.1063/1.4772016",
      "volume": "101",
      "year": "2012",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "issue": "19",
      "key": "2023061714504780800_c3",
      "doi-asserted-by": "publisher",
      "first-page": "192901",
      "DOI": "10.1063/1.2928230",
      "volume": "92",
      "year": "2008",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "issue": "9",
      "key": "2023061714504780800_c4",
      "doi-asserted-by": "publisher",
      "first-page": "2993",
      "DOI": "10.1557/jmr.2009.0349",
      "volume": "24",
      "year": "2009",
      "journal-title": "J. Mater. Res."
    },
    {
      "issue": "5",
      "key": "2023061714504780800_c5",
      "doi-asserted-by": "publisher",
      "first-page": "1133",
      "DOI": "10.1111/j.1551-2916.2009.03015.x",
      "volume": "92",
      "year": "2009",
      "journal-title": "J. Am. Ceram. Soc."
    },
    {
      "issue": "14",
      "key": "2023061714504780800_c6",
      "doi-asserted-by": "publisher",
      "first-page": "142902",
      "DOI": "10.1063/1.3497193",
      "volume": "97",
      "year": "2010",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "issue": "10",
      "key": "2023061714504780800_c7",
      "doi-asserted-by": "publisher",
      "first-page": "3234",
      "DOI": "10.1111/j.1551-2916.2011.04814.x",
      "volume": "94",
      "year": "2011",
      "journal-title": "J. Am. Ceram. Soc."
    },
    {
      "issue": "16",
      "key": "2023061714504780800_c8",
      "doi-asserted-by": "publisher",
      "first-page": "163903",
      "DOI": "10.1063/1.4802794",
      "volume": "102",
      "year": "2013",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "issue": "6",
      "key": "2023061714504780800_c9",
      "doi-asserted-by": "publisher",
      "first-page": "1647",
      "DOI": "10.1111/j.1551-2916.2011.04460.x",
      "volume": "94",
      "year": "2011",
      "journal-title": "J. Am. Ceram. Soc."
    },
    {
      "issue": "13",
      "key": "2023061714504780800_c10",
      "doi-asserted-by": "publisher",
      "first-page": "1770",
      "DOI": "10.1557/jmr.2012.124",
      "volume": "27",
      "year": "2012",
      "journal-title": "J. Mater. Res."
    },
    {
      "issue": "14",
      "key": "2023061714504780800_c11",
      "doi-asserted-by": "publisher",
      "first-page": "142905",
      "DOI": "10.1063/1.4801517",
      "volume": "102",
      "year": "2013",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "issue": "1",
      "key": "2023061714504780800_c12",
      "doi-asserted-by": "publisher",
      "first-page": "014103",
      "DOI": "10.1103/PhysRevB.81.014103",
      "volume": "81",
      "year": "2010",
      "journal-title": "Phys. Rev. B"
    },
    {
      "issue": "5",
      "key": "2023061714504780800_c13",
      "doi-asserted-by": "publisher",
      "first-page": "054101",
      "DOI": "10.1063/1.4790135",
      "volume": "113",
      "year": "2013",
      "journal-title": "J. Appl. Phys."
    },
    {
      "issue": "5",
      "key": "2023061714504780800_c14",
      "doi-asserted-by": "publisher",
      "first-page": "2507",
      "DOI": "10.1063/1.372211",
      "volume": "87",
      "year": "2000",
      "journal-title": "J. Appl. Phys."
    },
    {
      "issue": "23",
      "key": "2023061714504780800_c15",
      "doi-asserted-by": "publisher",
      "first-page": "6027",
      "DOI": "10.1023/A:1026775701354",
      "volume": "35",
      "year": "2000",
      "journal-title": "J. Mater. Sci."
    },
    {
      "issue": "17",
      "key": "2023061714504780800_c16a",
      "doi-asserted-by": "publisher",
      "first-page": "4241",
      "DOI": "10.1016/j.jcrysgro.2009.05.025",
      "volume": "311",
      "year": "2009",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2023061714504780800_c16b",
      "doi-asserted-by": "crossref",
      "unstructured": "See supplementary material at http://dx.doi.org/10.1063/1.4825336 for detailed information of structure property.",
      "DOI": "10.1063/1.4825336"
    },
    {
      "issue": "25",
      "key": "2023061714504780800_c17",
      "doi-asserted-by": "publisher",
      "first-page": "252904",
      "DOI": "10.1063/1.3669527",
      "volume": "99",
      "year": "2011",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "issue": "7",
      "key": "2023061714504780800_c18",
      "doi-asserted-by": "publisher",
      "first-page": "3753",
      "DOI": "10.1063/1.369744",
      "volume": "85",
      "year": "1999",
      "journal-title": "J. Appl. Phys."
    },
    {
      "issue": "20",
      "key": "2023061714504780800_c19",
      "doi-asserted-by": "publisher",
      "first-page": "202905",
      "DOI": "10.1063/1.2740171",
      "volume": "90",
      "year": "2007",
      "journal-title": "Appl. Phys. Lett."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.4825336/13675509/162903_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.4825336/13675509/162903_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        6,
        17
      ]
    ],
    "date-time": "2023-06-17T14:50:53Z",
    "timestamp": 1687013453000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/103/16/162903/25784/Effect-of-residual-stress-on-energy-storage"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2013,
        10,
        14
      ]
    ]
  },
  "references-count": 20,
  "journal-issue": {
    "issue": "16",
    "published-print": {
      "date-parts": [
        [
          2013,
          10,
          14
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.4825336",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2013,
        10,
        14
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2013,
        10,
        14
      ]
    ]
  },
  "article-number": "162903"
}