Abstract
Transmission X-ray microscopy is employed to detect nanoscale valence changes in resistive switching SrTiO3 thin film devices. By recording Ti L-edge spectra of samples in different resistive states, we could show that some spots with slightly distorted structure and a small reduction to Ti3+ are already present in the virgin films. In the ON-state, these spots are further reduced to Ti3+ to different degrees while the remaining film persists in the Ti4+ configuration. These observations are consistent with a self-accelerating reduction within pre-reduced extended growth defects.
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Dates
Type | When |
---|---|
Created | 11 years, 11 months ago (Oct. 2, 2013, 6:39 p.m.) |
Deposited | 2 years, 2 months ago (June 23, 2023, 12:06 a.m.) |
Indexed | 1 month ago (July 30, 2025, 7:01 a.m.) |
Issued | 11 years, 11 months ago (Oct. 1, 2013) |
Published | 11 years, 11 months ago (Oct. 1, 2013) |
Published Online | 11 years, 11 months ago (Oct. 1, 2013) |
Published Print | 11 years, 11 months ago (Oct. 1, 2013) |
@article{Koehl_2013, title={Evidence for multifilamentary valence changes in resistive switching SrTiO3 devices detected by transmission X-ray microscopy}, volume={1}, ISSN={2166-532X}, url={http://dx.doi.org/10.1063/1.4822438}, DOI={10.1063/1.4822438}, number={4}, journal={APL Materials}, publisher={AIP Publishing}, author={Koehl, A. and Wasmund, H. and Herpers, A. and Guttmann, P. and Werner, S. and Henzler, K. and Du, H. and Mayer, J. and Waser, R. and Dittmann, R.}, year={2013}, month=oct }