DOI: 10.1063/1.4821344. Remote phonon and impurity screening effect of substrate and gate dielectric on electron dynamics in single layer MoS2

Remote phonon and impurity screening effect of substrate and gate dielectric on electron dynamics in single layer MoS2

10.1063/1.4821344

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The effect of both remote phonon originating from and the screening of extrinsic charged impurity by substrate and gate dielectric on the electron dynamics of single layer MoS2 are investigated with Monte Carlo method. The temperature-dependent mobility curve measured by Hall effect is reproduced by taking the two counter roles played by substrate and gate dielectric into consideration. Based on the analysis of remote phonon effect and charged impurity screening, an optimized transistor structure which is composed of single HfO2 gate dielectric with interfacial layer and absence of SiO2 substrate is proposed for the realization of mobility approaching intrinsic value and best device performance.

Bibliography

Zeng, L., Xin, Z., Chen, S., Du, G., Kang, J., & Liu, X. (2013). Remote phonon and impurity screening effect of substrate and gate dielectric on electron dynamics in single layer MoS2. Applied Physics Letters, 103(11).

Authors 6

Lang Zeng (first)
Zheng Xin (additional)
Shaowen Chen (additional)
Gang Du (additional)
Jinfeng Kang (additional)
Xiaoyan Liu (additional)

References 21 Referenced 56

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10.1021/nl2043612 / Nano Lett. (2012)
10.1002/smll.201102654 / Small (2012)
10.1103/PhysRevLett.105.136805 / Phys. Rev. Lett. (2010)
10.1021/nl903868w / Nano Lett. (2010)
10.1038/nnano.2010.279 / Nat. Nanotechnol. (2011)
10.1109/LED.2012.2184520 / IEEE Electron Device Lett. (2012)
10.1021/nl303583v / Nano Lett. (2012)
10.1038/nnano.2013.30 / Nat. Nanotechnol. (2013)
10.1038/nnano.2013.31 / Nat. Nanotechnol. (2013)
10.1038/NMAT3687 / Nature Mater. (2013)
10.1103/PhysRevB.85.115317 / Phys. Rev. B (2012)
10.1103/PhysRevB.87.115418 / Phys. Rev. B (2013)
10.1063/1.1405826 / J. Appl. Phys. (2001)
10.1038/ncomms2018 / Nat. Commun. (2012)
{'first-page': '1', 'volume-title': 'Proceedings of the 2010 IEEE International Electron Devices Meeting (IEDM)', 'year': '2010', 'key': '2023062416303430500_c18'} / Proceedings of the 2010 IEEE International Electron Devices Meeting (IEDM) (2010)
10.1103/PhysRevB.77.195415 / Phys. Rev. B (2008)
10.1063/1.3525606 / Appl. Phys. Lett. (2010)
{'volume-title': 'Nanoscale MOS Transistors: Semi-Classical Transport and Applications', 'year': '2011', 'key': '2023062416303430500_c21'} / Nanoscale MOS Transistors: Semi-Classical Transport and Applications (2011)

Dates

Type	When
Created	11 years, 11 months ago (Sept. 13, 2013, 7:32 p.m.)
Deposited	2 years, 2 months ago (June 24, 2023, 10:38 p.m.)
Indexed	4 days, 2 hours ago (Sept. 3, 2025, 6:30 a.m.)
Issued	11 years, 11 months ago (Sept. 9, 2013)
Published	11 years, 11 months ago (Sept. 9, 2013)
Published Online	11 years, 11 months ago (Sept. 13, 2013)
Published Print	11 years, 11 months ago (Sept. 9, 2013)

Funders 0

None

BibTeX

@article{Zeng_2013, title={Remote phonon and impurity screening effect of substrate and gate dielectric on electron dynamics in single layer MoS2}, volume={103}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.4821344}, DOI={10.1063/1.4821344}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Zeng, Lang and Xin, Zheng and Chen, Shaowen and Du, Gang and Kang, Jinfeng and Liu, Xiaoyan}, year={2013}, month=sep }

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