Abstract
Tunnel field effect transistors (TFETs) based on vertical stacking of two dimensional materials are of interest for low-power logic devices. The monolayer transition metal dichalcogenides (TMDs) with sizable band gaps show promise in building p-n junctions (couples) for TFET applications. Band alignment information is essential for realizing broken gap junctions with excellent electron tunneling efficiencies. Promising couples composed of monolayer TMDs are suggested to be VIB-MeX2 (Me = W, Mo; X = Te, Se) as the n-type source and IVB-MeX2 (Me = Zr, Hf; X = S, Se) as the p-type drain by density functional theory calculations.
References
25
Referenced
709
10.1038/nature10679
/ Nature (2011)10.1109/JPROC.2010.2070470
/ Proc. IEEE (2010)10.1016/j.mee.2011.03.053
/ Microelectron. Eng. (2011)10.1016/j.cossms.2011.04.005
/ Curr. Opin. Solid State Mater. Sci. (2011)10.1126/science.1218461
/ Science (2012)10.1109/JPROC.2013.2253435
/ Proc. IEEE (2013)10.1007/s12274-011-0183-0
/ Nano Res. (2012)10.1021/nl301702r
/ Nano Lett. (2012)10.1103/PhysRevB.85.033305
/ Phys. Rev. B (2012)10.1016/0927-0256(96)00008-0
/ Comput. Mater. Sci. (1996)10.1103/PhysRevB.50.17953
/ Phys. Rev. B (1994)10.1103/PhysRevLett.77.3865
/ Phys. Rev. Lett. (1996)10.1103/PhysRevLett.45.566
/ Phys. Rev. Lett. (1980)10.1103/PhysRevLett.105.136805
/ Phys. Rev. Lett. (2010)10.1103/PhysRevB.85.205302
/ Phys. Rev. B (2012)10.1103/PhysRevB.87.155304
/ Phys. Rev. B (2013)10.1088/0034-4885/61/3/002
/ Rep. Prog. Phys. (1998)10.1063/1.4774090
/ Appl. Phys. Lett. (2013)10.1063/1.4816517
/ Appl. Phys. Lett. (2013){'volume-title': 'Electron Spectroscopies Applied to Low-Dimensional Materials', 'year': '2000', 'key': '2023072005073785600_c20'}
/ Electron Spectroscopies Applied to Low-Dimensional Materials (2000)10.1063/1.3696045
/ Appl. Phys. Lett. (2012){'volume-title': 'Electronic Structure and Electronic Transitions in Layered Materials', 'year': '1986', 'key': '2023072005073785600_c22'}
/ Electronic Structure and Electronic Transitions in Layered Materials (1986)10.1063/1.3524232
/ J. Appl. Phys. (2010)10.1103/PhysRevB.86.241401
/ Phys. Rev. B (2012)10.1021/nn301320r
/ ACS Nano (2012)
Dates
Type | When |
---|---|
Created | 12 years ago (Aug. 2, 2013, 7:15 p.m.) |
Deposited | 2 years, 1 month ago (July 20, 2023, 1:15 a.m.) |
Indexed | 4 hours, 14 minutes ago (Aug. 23, 2025, 1:09 a.m.) |
Issued | 12 years ago (July 29, 2013) |
Published | 12 years ago (July 29, 2013) |
Published Online | 12 years ago (Aug. 1, 2013) |
Published Print | 12 years ago (July 29, 2013) |
@article{Gong_2013, title={Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors}, volume={103}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.4817409}, DOI={10.1063/1.4817409}, number={5}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Gong, Cheng and Zhang, Hengji and Wang, Weihua and Colombo, Luigi and Wallace, Robert M. and Cho, Kyeongjae}, year={2013}, month=jul }