Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Tunnel field effect transistors (TFETs) based on vertical stacking of two dimensional materials are of interest for low-power logic devices. The monolayer transition metal dichalcogenides (TMDs) with sizable band gaps show promise in building p-n junctions (couples) for TFET applications. Band alignment information is essential for realizing broken gap junctions with excellent electron tunneling efficiencies. Promising couples composed of monolayer TMDs are suggested to be VIB-MeX2 (Me = W, Mo; X = Te, Se) as the n-type source and IVB-MeX2 (Me = Zr, Hf; X = S, Se) as the p-type drain by density functional theory calculations.

Bibliography

Gong, C., Zhang, H., Wang, W., Colombo, L., Wallace, R. M., & Cho, K. (2013). Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors. Applied Physics Letters, 103(5).

Authors 6
  1. Cheng Gong (first)
  2. Hengji Zhang (additional)
  3. Weihua Wang (additional)
  4. Luigi Colombo (additional)
  5. Robert M. Wallace (additional)
  6. Kyeongjae Cho (additional)
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Dates
Type When
Created 12 years ago (Aug. 2, 2013, 7:15 p.m.)
Deposited 2 years, 1 month ago (July 20, 2023, 1:15 a.m.)
Indexed 4 hours, 14 minutes ago (Aug. 23, 2025, 1:09 a.m.)
Issued 12 years ago (July 29, 2013)
Published 12 years ago (July 29, 2013)
Published Online 12 years ago (Aug. 1, 2013)
Published Print 12 years ago (July 29, 2013)
Funders 0

None

@article{Gong_2013, title={Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors}, volume={103}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.4817409}, DOI={10.1063/1.4817409}, number={5}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Gong, Cheng and Zhang, Hengji and Wang, Weihua and Colombo, Luigi and Wallace, Robert M. and Cho, Kyeongjae}, year={2013}, month=jul }