Abstract
Molybdenum disulfide (MoS2) is a layered semiconductor which has become very important recently as an emerging electronic device material. Being an intrinsic semiconductor the two-dimensional MoS2 has major advantages as the channel material in field-effect transistors. In this work we determine the electronic structures of MoS2 with the highly accurate screened hybrid functional within the density functional theory (DFT) including the spin-orbit coupling. Using the DFT electronic structures as target, we have developed a single generic tight-binding (TB) model that accurately produces the electronic structures for three different forms of MoS2 - bulk, bilayer and monolayer. Our TB model is based on the Slater-Koster method with non-orthogonal sp3d5 orbitals, nearest-neighbor interactions and spin-orbit coupling. The TB model is useful for atomistic modeling of quantum transport in MoS2 based electronic devices.
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Dates
Type | When |
---|---|
Created | 12 years, 3 months ago (May 8, 2013, 6:43 p.m.) |
Deposited | 2 months, 2 weeks ago (June 3, 2025, 2:21 p.m.) |
Indexed | 2 weeks, 3 days ago (Aug. 6, 2025, 9:58 a.m.) |
Issued | 12 years, 3 months ago (May 1, 2013) |
Published | 12 years, 3 months ago (May 1, 2013) |
Published Online | 12 years, 3 months ago (May 8, 2013) |
Published Print | 12 years, 3 months ago (May 1, 2013) |
@article{Zahid_2013, title={A generic tight-binding model for monolayer, bilayer and bulk MoS2}, volume={3}, ISSN={2158-3226}, url={http://dx.doi.org/10.1063/1.4804936}, DOI={10.1063/1.4804936}, number={5}, journal={AIP Advances}, publisher={AIP Publishing}, author={Zahid, Ferdows and Liu, Lei and Zhu, Yu and Wang, Jian and Guo, Hong}, year={2013}, month=may }