DOI: 10.1063/1.4801861. High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains

High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains

10.1063/1.4801861

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report the electrical characteristics of field-effect transistors (FETs) with single-crystal molybdenum disulfide (MoS2) channels synthesized by chemical vapor deposition (CVD). For a bilayer MoS2 FET, the field-effect mobility is ∼17 cm2 V−1 s−1 and the on/off current ratio is ∼108, which are much higher than those of FETs based on CVD polycrystalline MoS2 films. By avoiding the detrimental effects of the grain boundaries and the contamination introduced by the transfer process, the quality of the CVD MoS2 atomic layers deposited directly on SiO2 is comparable to or better than the exfoliated MoS2 flakes. The result shows that CVD is a viable method to synthesize high quality MoS2 atomic layers.

Bibliography

Wu, W., De, D., Chang, S.-C., Wang, Y., Peng, H., Bao, J., & Pei, S.-S. (2013). High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains. Applied Physics Letters, 102(14).

Authors 7

Wei Wu (first)
Debtanu De (additional)
Su-Chi Chang (additional)
Yanan Wang (additional)
Haibing Peng (additional)
Jiming Bao (additional)
Shin-Shem Pei (additional)

References 32 Referenced 230

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Dates

Type	When
Created	12 years, 4 months ago (April 11, 2013, 6:09 p.m.)
Deposited	2 years ago (Aug. 6, 2023, 12:46 a.m.)
Indexed	3 weeks, 2 days ago (Aug. 2, 2025, 12:28 a.m.)
Issued	12 years, 4 months ago (April 8, 2013)
Published	12 years, 4 months ago (April 8, 2013)
Published Online	12 years, 4 months ago (April 11, 2013)
Published Print	12 years, 4 months ago (April 8, 2013)

Funders 1

National Science Foundation 10.13039/100000001
Region: Americas
gov (National government)
Labels4
1. U.S. National Science Foundation
2. NSF
3. US NSF
4. USA NSF
Awards3
1. ECCS-1240510
2. ECCS-1247874
3. DMR-0907336

BibTeX

@article{Wu_2013, title={High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains}, volume={102}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.4801861}, DOI={10.1063/1.4801861}, number={14}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Wu, Wei and De, Debtanu and Chang, Su-Chi and Wang, Yanan and Peng, Haibing and Bao, Jiming and Pei, Shin-Shem}, year={2013}, month=apr }

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