DOI: 10.1063/1.4799382. Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography

Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography

10.1063/1.4799382

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

A method for determining concentrations from high-angle annular dark field-scanning transmission electron microscopy images is presented. The method is applied to an InGaN/GaN multi-quantum well structure with high In content, as used for the fabrication of light emitting diodes and laser diodes emitting in the green spectral range. Information on specimen thickness and In concentration is extracted by comparison with multislice calculations. Resulting concentration profiles are in good agreement with a comparative atom probe tomography analysis. Indium concentrations in the quantum wells ranging from 26 at. % to 33 at. % are measured in both cases.

Bibliography

Mehrtens, T., Schowalter, M., Tytko, D., Choi, P., Raabe, D., Hoffmann, L., JÃ¶nen, H., Rossow, U., Hangleiter, A., & Rosenauer, A. (2013). Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography. Applied Physics Letters, 102(13).

Authors 10

T. Mehrtens (first)
M. Schowalter (additional)
D. Tytko (additional)
P. Choi (additional)
D. Raabe (additional)
L. Hoffmann (additional)
H. Jönen (additional)
U. Rossow (additional)
A. Hangleiter (additional)
A. Rosenauer (additional)

References 22 Referenced 36

10.1063/1.1368156 / J. Appl. Phys. (2001)
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10.1143/APEX.3.061003 / Appl. Phys. Express (2010)
10.1103/PhysRevB.61.8276 / Phys. Rev. B (2000)
10.1063/1.1636534 / Appl. Phys. Lett. (2003)
10.1016/j.ultramic.2011.04.009 / Ultramicroscopy (2011)
10.1016/j.ultramic.2009.05.003 / Ultramicroscopy (2009)
10.1063/1.4795623 / Appl. Phys. Lett. (2013)
10.1016/S0968-4328(99)00005-0 / Micron (1999)
10.1016/j.micron.2012.03.008 / Micron (2012)
10.1016/j.ultramic.2006.06.008 / Ultramicroscopy (2007)
10.1007/978-1-4020-8615-1 / Microscopy of Semiconducting Materials 2007 by Cullis (2008)
10.1103/PhysRevB.77.054103 / Phys. Rev. B (2008)
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10.1006/jcph.1995.1039 / J. Comput. Phys. (1995)
10.1107/S0108767309004966 / Acta Crystallogr. (2009)
10.1016/j.ultramic.2008.07.001 / Ultramicroscopy (2008)
10.1016/j.ultramic.2012.09.001 / Ultramicroscopy (2013)
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See supplementary material at http://dx.doi.org/10.1063/1.4799382 for a parameterization of the simulated reference data of Fig. 3a) for reproduction.

Dates

Type	When
Created	12 years, 4 months ago (April 5, 2013, 7:08 p.m.)
Deposited	2 years, 2 months ago (June 24, 2023, 10:05 p.m.)
Indexed	1 month ago (July 30, 2025, 6:58 a.m.)
Issued	12 years, 4 months ago (April 1, 2013)
Published	12 years, 4 months ago (April 1, 2013)
Published Online	12 years, 4 months ago (April 4, 2013)
Published Print	12 years, 4 months ago (April 1, 2013)

Funders 1

Deutsche Forschungsgemeinschaft 10.13039/501100001659
Region: Europe
gov (National government)
Labels3
1. German Research Association
2. German Research Foundation
3. DFG
Awards1
1. RO2057/8-1

BibTeX

@article{Mehrtens_2013, title={Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography}, volume={102}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.4799382}, DOI={10.1063/1.4799382}, number={13}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mehrtens, T. and Schowalter, M. and Tytko, D. and Choi, P. and Raabe, D. and Hoffmann, L. and Jönen, H. and Rossow, U. and Hangleiter, A. and Rosenauer, A.}, year={2013}, month=apr }

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