DOI: 10.1063/1.4794193. Atomic resolution mapping of interfacial intermixing and segregation in InAs/GaSb superlattices: A correlative study

Atomic resolution mapping of interfacial intermixing and segregation in InAs/GaSb superlattices: A correlative study

10.1063/1.4794193

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

We combine quantitative analyses of Z-contrast images with composition analyses employing atom probe tomography (APT) correlatively to provide a quantitative measurement of atomic scale interfacial intermixing in an InAs/GaSb superlattice (SL). Contributions from GaSb and InAs in the Z-contrast images are separated using an improved image processing technique. Correlation with high resolution APT composition analyses permits an examination of interfacial segregation of both cations and anions and their incorporation in the short period InAs/GaSb SL. Results revealed short, intermediate, and long-range intermixing of In, Ga, and Sb during molecular beam epitaxial growth and their distribution in the SL.

Bibliography

Kim, H., Meng, Y., RouviÃ©re, J.-L., Isheim, D., Seidman, D. N., & Zuo, J.-M. (2013). Atomic resolution mapping of interfacial intermixing and segregation in InAs/GaSb superlattices: A correlative study. Journal of Applied Physics, 113(10).

Authors 6

Honggyu Kim (first)
Yifei Meng (additional)
Jean-Luc Rouviére (additional)
Dieter Isheim (additional)
David N. Seidman (additional)
Jian-Min Zuo (additional)

References 31 Referenced 45

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10.1016/j.infrared.2009.05.028 / Infrared Phys. Technol. (2009)
10.1007/s11664-011-1653-6 / J. Electron. Mater. (2011)
10.1016/j.jcrysgro.2004.12.044 / J. Cryst. Growth (2005)
10.1063/1.1879113 / Appl. Phys. Lett. (2005)
10.1016/j.jcrysgro.2004.09.088 / J. Cryst. Growth (2005)
10.1016/j.jcrysgro.2010.11.003 / J. Cryst. Growth (2011)
10.1007/s11664-010-1084-9 / J. Electron. Mater. (2010)
10.1103/PhysRevLett.85.4562 / Phys. Rev. Lett. (2000)
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Dates

Type	When
Created	12 years, 5 months ago (March 13, 2013, 7:03 p.m.)
Deposited	2 years ago (Aug. 3, 2023, 4:10 a.m.)
Indexed	2 weeks, 2 days ago (Aug. 6, 2025, 8:39 a.m.)
Issued	12 years, 5 months ago (March 13, 2013)
Published	12 years, 5 months ago (March 13, 2013)
Published Online	12 years, 5 months ago (March 13, 2013)
Published Print	12 years, 5 months ago (March 14, 2013)

Funders 2

Office of Naval Research 10.13039/100000006
Region: Americas
gov (National government)
Labels6
1. U.S. Office of Naval Research
2. Naval Research
3. United States Office of Naval Research
4. U.S. Department of the Navy Office of Naval Research
5. The Office of Naval Research
6. ONR
Awards3
1. N00014-0910781
2. N00014-0610539
3. N00014-0400798
National Science Foundation 10.13039/100000001
Region: Americas
gov (National government)
Labels4
1. U.S. National Science Foundation
2. NSF
3. US NSF
4. USA NSF
Awards1
1. DMR-0420532

BibTeX

@article{Kim_2013, title={Atomic resolution mapping of interfacial intermixing and segregation in InAs/GaSb superlattices: A correlative study}, volume={113}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.4794193}, DOI={10.1063/1.4794193}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Kim, Honggyu and Meng, Yifei and Rouviére, Jean-Luc and Isheim, Dieter and Seidman, David N. and Zuo, Jian-Min}, year={2013}, month=mar }

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