DOI: 10.1063/1.4789365. High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects

High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects

10.1063/1.4789365

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics and measure charge carrier mobility in a four-probe configuration. For multilayer MoS2 on SiO2, the mobility is 30–60 cm2/Vs, relatively independent of thickness (15–90 nm), and most devices exhibit unipolar n-type behavior. In contrast, multilayer MoS2 on PMMA shows mobility increasing with thickness, up to 470 cm2/Vs (electrons) and 480 cm2/Vs (holes) at thickness ∼50 nm. The dependence of the mobility on thickness points to a long-range dielectric effect of the bulk MoS2 in increasing mobility.

Bibliography

Bao, W., Cai, X., Kim, D., Sridhara, K., & Fuhrer, M. S. (2013). High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects. Applied Physics Letters, 102(4).

Authors 5

Wenzhong Bao (first)
Xinghan Cai (additional)
Dohun Kim (additional)
Karthik Sridhara (additional)
Michael S. Fuhrer (additional)

References 26 Referenced 711

10.1073/pnas.0502848102 / Proc. Natl. Acad. Sci. USA (2005)
10.1038/nature04233 / Nature (2005)
10.1038/nature04235 / Nature (2005)
10.1103/RevModPhys.81.109 / Rev. Mod. Phys. (2009)
10.1103/RevModPhys.83.407 / Rev. Mod. Phys. (2011)
10.1103/PhysRevB.57.6666 / Phys. Rev. B (1998)
10.1021/nl903868w / Nano Lett. (2010)
10.1103/PhysRevLett.105.136805 / Phys. Rev. Lett. (2010)
10.1103/PhysRevB.85.205302 / Phys. Rev. B (2012)
10.1103/PhysRevB.84.045409 / Phys. Rev. B (2011)
10.1063/1.2407388 / J. Appl. Phys. (2007)
10.1038/nnano.2010.279 / Nat. Nanotechnol. (2011)
10.1109/LED.2012.2184520 / IEEE Electron Device Lett. (2012)
10.1088/0022-3727/45/34/345102 / J. Phys. D-Appl. Phys. (2012)
10.1038/ncomms2018 / Nat. Commun. (2012)
10.1021/nl2021575 / Nano Lett. (2012)
M. Fontana, T. Deppe, A. K. Boyd, M. Rinzan, A. Y. Liu, M. Paranjape, and P. Barbara, “Photovoltaic effect in gated MoS2 Schottky junctions,” preprint arXiv:1206.6125 (2012). (10.1038/srep01634)
R. S. Sundaram, M. Engel, A. Lombardo, R. Krupke, A. C. Ferrari, P. Avouris, and M. Steiner, “Electroluminescence in Single Layer MoS2,” preprint arXiv:1211.4311 (2012). (10.1021/nl400516a)
10.1103/PhysRevB.84.205325 / Phys. Rev. B (2011)
10.1021/jp307124d / J. Phys. Chem. C (2012)
10.1126/science.1228006 / Science (2012)
10.1103/PhysRevLett.101.146805 / Phys, Rev. Lett. (2008)
10.1063/1.3696045 / Appl. Phys. Lett. (2012)
M. S. Fuhrer and J. Hone, “Measurement of mobility in dual-gated MoS2 transistors,” preprint ArXiv:1301.4288.
10.1007/s12274-010-1013-5 / Nano Res. (2010)
10.1103/PhysRevB.85.115317 / Phys. Rev. B (2012)

Dates

Type	When
Created	12 years, 6 months ago (Jan. 29, 2013, 6:50 p.m.)
Deposited	2 years ago (Aug. 6, 2023, 12:49 a.m.)
Indexed	13 hours, 14 minutes ago (Aug. 21, 2025, 12:51 p.m.)
Issued	12 years, 6 months ago (Jan. 28, 2013)
Published	12 years, 6 months ago (Jan. 28, 2013)
Published Online	12 years, 6 months ago (Jan. 29, 2013)
Published Print	12 years, 6 months ago (Jan. 28, 2013)

Funders 1

National Science Foundation 10.13039/100000001
Region: Americas
gov (National government)
Labels4
1. U.S. National Science Foundation
2. NSF
3. US NSF
4. USA NSF
Awards1
1. DMR-11-05224

BibTeX

@article{Bao_2013, title={High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects}, volume={102}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.4789365}, DOI={10.1063/1.4789365}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Bao, Wenzhong and Cai, Xinghan and Kim, Dohun and Sridhara, Karthik and Fuhrer, Michael S.}, year={2013}, month=jan }

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  "abstract": "<jats:p>We fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics and measure charge carrier mobility in a four-probe configuration. For multilayer MoS2 on SiO2, the mobility is 30\u201360 cm2/Vs, relatively independent of thickness (15\u201390\u2009nm), and most devices exhibit unipolar n-type behavior. In contrast, multilayer MoS2 on PMMA shows mobility increasing with thickness, up to 470 cm2/Vs (electrons) and 480 cm2/Vs (holes) at thickness \u223c50\u2009nm. The dependence of the mobility on thickness points to a long-range dielectric effect of the bulk MoS2 in increasing mobility.</jats:p>",
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