DOI: 10.1063/1.4768218. Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers

Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers

10.1063/1.4768218

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices show asymmetric characteristics upon swapping the source and drain, a finding explained by the presence of Schottky barriers at the metal contact/MoSe2 interface. Using four-point, back-gated devices, we measure the intrinsic conductivity and mobility of MoSe2 as a function of gate bias, and temperature. Samples with a room temperature mobility of ∼ 50 cm2/V·s show a strong temperature dependence, suggesting phonons are a dominant scattering mechanism.

Bibliography

Larentis, S., Fallahazad, B., & Tutuc, E. (2012). Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers. Applied Physics Letters, 101(22).

Authors 3

Stefano Larentis (first)
Babak Fallahazad (additional)
Emanuel Tutuc (additional)

References 31 Referenced 533

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Dates

Type	When
Created	12 years, 9 months ago (Nov. 27, 2012, 9:07 a.m.)
Deposited	2 years, 2 months ago (June 24, 2023, 11:43 a.m.)
Indexed	14 hours, 29 minutes ago (Sept. 6, 2025, 4:01 p.m.)
Issued	12 years, 9 months ago (Nov. 26, 2012)
Published	12 years, 9 months ago (Nov. 26, 2012)
Published Online	12 years, 9 months ago (Nov. 26, 2012)
Published Print	12 years, 9 months ago (Nov. 26, 2012)

Funders 0

None

BibTeX

@article{Larentis_2012, title={Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers}, volume={101}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.4768218}, DOI={10.1063/1.4768218}, number={22}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Larentis, Stefano and Fallahazad, Babak and Tutuc, Emanuel}, year={2012}, month=nov }

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