DOI: 10.1063/1.4767368. Formation of native defects in the γ-ray detector material Cs2Hg6S7

Formation of native defects in the γ-ray detector material Cs2Hg6S7

10.1063/1.4767368

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Semiconductor γ-ray detectors have broad applications, yet finding superior detector materials is a challenge because of its contradictory requirements. Here, we investigated a large set of native defects in Cs2Hg6S7 that has been suggested as a promising candidate for detector materials. Using first-principles calculations, we showed that S-vacancy and HgCs-antisite defect provide life-time limiting deep levels, and Cs-vacancy forms a shallow acceptor level, resulting in low resistivity. To decrease such detrimental effects, concentrations of defects and carriers were examined in various chemical environments, which reveal that carrier densities can be extremely reduced by adjusting Cs partial pressure.

Bibliography

Im, J., Jin, H., Li, H., Peters, J. A., Liu, Z., Wessels, B. W., Kanatzidis, M. G., & Freeman, A. J. (2012). Formation of native defects in the Î³-ray detector material Cs2Hg6S7. Applied Physics Letters, 101(20).

Authors 8

Jino Im (first)
Hosub Jin (additional)
Hao Li (additional)
John A. Peters (additional)
Zhifu Liu (additional)
Bruce W. Wessels (additional)
Mercouri G. Kanatzidis (additional)
Arthur J. Freeman (additional)

References 20 Referenced 11

{'volume-title': 'Radiation Detectors, Physical Principles and Applications', 'year': '1992', 'key': '2023061803090308500_c1'} / Radiation Detectors, Physical Principles and Applications (1992)
10.1557/JMR.2008.0319 / J. Mater. Res. (2008)
10.1016/S0927-796X(01)00027-4 / Mater. Sci. Eng. R (2001)
10.1007/s11664-003-0066-6 / J. Electron. Mater. (2003)
10.1016/j.nima.2004.05.071 / Nucl. Instrum. Methods Phys. Res. A (2004)
10.1016/S0168-9002(97)00620-7 / Nucl. Instrum. Methods Phys. Res. A (1997)
10.1016/S0022-0248(01)00831-4 / J. Cryst. Growth (2001)
10.1107/S0909049505033339 / J. Synchrotron Radiat. (2006)
10.1002/adma.201102450 / Adv. Mater. (2011)
10.1021/cg300385s / Cryst. Growth Des. (2012)
10.1103/PhysRevB.50.17953 / Phys. Rev. B (1994)
10.1103/PhysRevB.54.11169 / Phys. Rev. B (1996)
10.1103/PhysRevB.47.558 / Phys. Rev. B (1993)
10.1103/PhysRevB.13.5188 / Phys. Rev. B (1976)
10.1103/PhysRevLett.77.3865 / Phys. Rev. Lett. (1996)
10.1063/1.1682673 / J. Appl. Phys. (2004)
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Dates

Type	When
Created	12 years, 9 months ago (Nov. 13, 2012, 6:09 p.m.)
Deposited	2 years, 2 months ago (June 17, 2023, 11:09 p.m.)
Indexed	1 month ago (July 30, 2025, 6:59 a.m.)
Issued	12 years, 9 months ago (Nov. 12, 2012)
Published	12 years, 9 months ago (Nov. 12, 2012)
Published Online	12 years, 9 months ago (Nov. 13, 2012)
Published Print	12 years, 9 months ago (Nov. 12, 2012)

Funders 0

None

BibTeX

@article{Im_2012, title={Formation of native defects in the γ-ray detector material Cs2Hg6S7}, volume={101}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.4767368}, DOI={10.1063/1.4767368}, number={20}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Im, Jino and Jin, Hosub and Li, Hao and Peters, John A. and Liu, Zhifu and Wessels, Bruce W. and Kanatzidis, Mercouri G. and Freeman, Arthur J.}, year={2012}, month=nov }

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