DOI: 10.1063/1.4765720. Nondestructive characterization of a TiN metal gate: Chemical and structural properties by means of standing-wave hard x-ray photoemission spectroscopy

Nondestructive characterization of a TiN metal gate: Chemical and structural properties by means of standing-wave hard x-ray photoemission spectroscopy

10.1063/1.4765720

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Standing-wave (SW) hard x-ray photoemission (HXPS, HAXPES) is applied to a thick (100 Å) film of a metal gate TiN grown on top of a Si/MoSi2 multilayer mirror. The mirror is used to produce a standing wave of 30 Å period that is scanned through the sample by varying the x-ray incidence angle over its 1st-order Bragg condition, thus generating rocking curves of various core-level intensities. The thickness and chemical state of the top, oxidized surface of TiN, as well as the buried interface between TiN and the native oxide on top of the mirror are determined by SW-HXPS. The information provided by SW-HXPS is compared to that obtained by XPS Ar+ depth profile. The SW-HXPS method not only does not require destroying the sample but also provides more quantitative results and a more detailed profile of the interfaces than XPS Ar+ depth profile. Various applications of SW-HXPS to nanoscale multilayer semiconductor systems are thus suggested.

Bibliography

Papp, C., Conti, G., Balke, B., Ueda, S., Yamashita, Y., Yoshikawa, H., Uritsky, Y. S., Kobayashi, K., & Fadley, C. S. (2012). Nondestructive characterization of a TiN metal gate: Chemical and structural properties by means of standing-wave hard x-ray photoemission spectroscopy. Journal of Applied Physics, 112(11).

Authors 9

C. Papp (first)
G. Conti (additional)
B. Balke (additional)
S. Ueda (additional)
Y. Yamashita (additional)
H. Yoshikawa (additional)
Y. S. Uritsky (additional)
K. Kobayashi (additional)
C. S. Fadley (additional)

References 39 Referenced 12

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{'key': '2023062406152448800_c12'}
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Dates

Type	When
Created	12 years, 8 months ago (Dec. 4, 2012, 4:01 a.m.)
Deposited	2 years, 2 months ago (June 24, 2023, 2:48 p.m.)
Indexed	4 weeks, 2 days ago (July 30, 2025, 6:59 a.m.)
Issued	12 years, 8 months ago (Dec. 1, 2012)
Published	12 years, 8 months ago (Dec. 1, 2012)
Published Online	12 years, 8 months ago (Dec. 3, 2012)
Published Print	12 years, 8 months ago (Dec. 1, 2012)

Funders 1

U.S. Department of Energy 10.13039/100000015
Region: Americas
gov (National government)
Labels8
1. Energy Department
2. Department of Energy
3. United States Department of Energy
4. ENERGY.GOV
5. US Department of Energy
6. USDOE
7. DOE
8. USADOE
Awards1
1. DE-AC02-05CH11231

BibTeX

@article{Papp_2012, title={Nondestructive characterization of a TiN metal gate: Chemical and structural properties by means of standing-wave hard x-ray photoemission spectroscopy}, volume={112}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.4765720}, DOI={10.1063/1.4765720}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Papp, C. and Conti, G. and Balke, B. and Ueda, S. and Yamashita, Y. and Yoshikawa, H. and Uritsky, Y. S. and Kobayashi, K. and Fadley, C. S.}, year={2012}, month=dec }

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    "date-time": "2023-06-24T18:48:59Z",
    "timestamp": 1687632539000
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      "URL": "https://pubs.aip.org/jap/article/112/11/114501/148516/Nondestructive-characterization-of-a-TiN-metal"
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