DOI: 10.1063/1.4761997. Hot-carrier trap-limited transport in switching chalcogenides

Hot-carrier trap-limited transport in switching chalcogenides

10.1063/1.4761997

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Chalcogenide materials have received great attention in the last decade owing to their application in new memory systems. Recently, phase-change memories have, in fact, reached the early stages of production. In spite of the industrial exploitation of such materials, the physical processes governing the switching mechanism are still debated. In this paper, we work out a complete and consistent model for transport in amorphous chalcogenide materials based on trap-limited conduction accompanied by carrier heating. A previous model is here extended to include position-dependent carrier concentration and field, consistently linked by the Poisson equation. The results of the new model reproduce the experimental electrical characteristics and their dependences on the device length and temperature. Furthermore, the model provides a sound physical interpretation of the switching phenomenon and is able to give an estimate of the threshold condition in terms of the material parameters, a piece of information of great technological interest.

Bibliography

Piccinini, E., Cappelli, A., Buscemi, F., Brunetti, R., Ielmini, D., Rudan, M., & Jacoboni, C. (2012). Hot-carrier trap-limited transport in switching chalcogenides. Journal of Applied Physics, 112(8).

Authors 7

Enrico Piccinini (first)
Andrea Cappelli (additional)
Fabrizio Buscemi (additional)
Rossella Brunetti (additional)
Daniele Ielmini (additional)
Massimo Rudan (additional)
Carlo Jacoboni (additional)

References 24 Referenced 37

{'year': '2011', 'key': '2023070503082845400_c1'} (2011)
10.1109/JPROC.2003.818324 / Proc. IEEE (2003)
{'volume': '2009', 'journal-title': 'Tech. Dig. - Int. Electron Devices Meet.', 'first-page': '617', 'key': '2023070503082845400_c3'} / Tech. Dig. - Int. Electron Devices Meet.
10.1109/JPROC.2009.2035147 / Proc. IEEE (2010)
10.1109/JPROC.2010.2070050 / Proc. IEEE (2010)
10.1103/PhysRevLett.21.1450 / Phys. Rev. Lett. (1968)
10.1038/nmat2009 / Nature Mater. (2007)
{'key': '2023070503082845400_c8', 'first-page': '48', 'volume': '21', 'year': '1996', 'journal-title': 'Mater. Res. Soc. Symp. Bull.'} / Mater. Res. Soc. Symp. Bull. (1996)
10.1103/RevModPhys.50.209 / Rev. Mod. Phys. (1978)
10.1063/1.328036 / J. Appl. Phys. (1980)
{'volume': '2001', 'journal-title': 'Tech. Dig. - Int. Electron Devices Meet.', 'first-page': '803', 'key': '2023070503082845400_c11'} / Tech. Dig. - Int. Electron Devices Meet.
10.1109/TED.2003.823243 / IEEE Trans. Electron Devices (2004)
10.1109/TED.2011.2168402 / IEEE Trans. Electron Devices (2011)
10.1063/1.2715024 / Appl. Phys. Lett. (2007)
10.1063/1.3478713 / J. Appl. Phys. (2010)
10.1063/1.2773688 / J. Appl. Phys. (2007)
10.1103/PhysRevB.78.035308 / Phys. Rev. B (2008)
10.1063/1.3259421 / J. Appl. Phys. (2009)
{'volume-title': 'Electronic Processes in Non-Crystalline Materials', 'year': '1979', 'key': '2023070503082845400_c19'} / Electronic Processes in Non-Crystalline Materials (1979)
{'volume-title': 'Electronic Properties of Doped Semiconductors', 'year': '1984', 'key': '2023070503082845400_c20'} / Electronic Properties of Doped Semiconductors (1984)
{'volume-title': 'Theory of Electron Transport in Semiconductors', 'year': '2010', 'key': '2023070503082845400_c21'} / Theory of Electron Transport in Semiconductors (2010)
10.1016/j.jpcs.2007.01.017 / J. Phys. Chem. Solids (2007)
See supplementary material at http://dx.doi.org/10.1063/1.4761997 for an animation showing the evolution of f(z), t(z), and n(z) as a function of the current.
10.1147/rd.135.0515 / IBM J. Res. Dev. (1969)

Dates

Type	When
Created	12 years, 9 months ago (Oct. 30, 2012, 6:12 p.m.)
Deposited	2 years, 1 month ago (July 5, 2023, 1:55 p.m.)
Indexed	3 weeks, 3 days ago (July 30, 2025, 6:59 a.m.)
Issued	12 years, 10 months ago (Oct. 15, 2012)
Published	12 years, 10 months ago (Oct. 15, 2012)
Published Online	12 years, 9 months ago (Oct. 29, 2012)
Published Print	12 years, 10 months ago (Oct. 15, 2012)

Funders 0

None

BibTeX

@article{Piccinini_2012, title={Hot-carrier trap-limited transport in switching chalcogenides}, volume={112}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.4761997}, DOI={10.1063/1.4761997}, number={8}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Piccinini, Enrico and Cappelli, Andrea and Buscemi, Fabrizio and Brunetti, Rossella and Ielmini, Daniele and Rudan, Massimo and Jacoboni, Carlo}, year={2012}, month=oct }

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