DOI: 10.1063/1.4714737. Cd-free buffer layer materials on Cu2ZnSn(SxSe1−x)4: Band alignments with ZnO, ZnS, and In2S3

Cd-free buffer layer materials on Cu2ZnSn(SxSe1−x)4: Band alignments with ZnO, ZnS, and In2S3

10.1063/1.4714737

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The heterojunctions formed between Cu2ZnSn(SxSe1−x)4 (CZTSSe) and three Cd-free n-type buffers, ZnS, ZnO, and In2S3, were studied using femtosecond ultraviolet photoemission and photovoltage spectroscopy. The electronic properties including the Fermi level location at the interface, band bending in the CZTSSe substrate, and valence and conduction band offsets were determined and correlated with device properties. We also describe a method for determining the band bending in the buffer layer and demonstrate this for the In2S3/CZTSSe system. The chemical bath deposited In2S3 buffer is found to have near optimal conduction band offset (0.15 eV), enabling the demonstration of Cd-free In2S3/CZTSSe solar cells with 7.6% power conversion efficiency.

Bibliography

Barkhouse, D. A. R., Haight, R., Sakai, N., Hiroi, H., Sugimoto, H., & Mitzi, D. B. (2012). Cd-free buffer layer materials on Cu2ZnSn(SxSe1âx)4: Band alignments with ZnO, ZnS, and In2S3. Applied Physics Letters, 100(19).

Authors 6

D. Aaron R. Barkhouse (first)
Richard Haight (additional)
Noriyuki Sakai (additional)
Homare Hiroi (additional)
Hiroki Sugimoto (additional)
David B. Mitzi (additional)

References 19 Referenced 184

10.1002/pip.1078 / Prog. Photovolt. Res. Appl. (2011)
10.1002/pip.1160 / Prog. Photovolt. Res. Appl. (2012)
10.1063/1.3600776 / Appl. Phys. Lett. (2011)
10.1016/j.tsf.2004.05.096 / Thin Solid Films (2005)
10.1143/JJAP.50.032301 / Jpn. J.Appl. Phys. (2011)
10.1557/PROC-1165-M04-01 / Mater. Res. Soc. Symp. Proc. (2009)
10.1109/PVSC.2011.6185941 / Proceedings of the 37th IEEE Photovoltaic Specialists Conference (2011)
10.1002/adma.200904155 / Adv. Mater. (2010)
10.1063/1.3457172 / Appl. Phys. Lett. (2010)
10.1016/S0927-0248(00)00289-0 / Sol. Energy Mater. Sol. Cells (2001)
10.1016/0927-0248(96)80009-2 / Sol. Energy Mater. Sol. Cells (1996)
10.1116/1.2083909 / J. Vac. Sci. Technol. A (2005)
10.1116/1.1850105 / J. Vac. Sci. Technol. B. (2005)
10.1109/PVSC.2011.6186342 / Proceedings of the 37th IEEE Photovoltaic Specialists Conference (2011)
10.1088/0953-8984/23/40/404203 / J. Phys.: Condens. Matter (2011)
10.1103/PhysRevB.79.165211 / Phys. Rev. B (2009)
10.1063/1.3143626 / Appl. Phys. Lett. (2009)
10.1016/S0927-0248(00)00266-X / Sol. Energy Mater. Sol. Cells (2001)
10.1063/1.2222067 / J. Appl. Phys. (2006)

Dates

Type	When
Created	13 years, 3 months ago (May 11, 2012, 9:06 p.m.)
Deposited	2 years ago (July 31, 2023, 4:27 a.m.)
Indexed	3 weeks, 3 days ago (July 30, 2025, 6:58 a.m.)
Issued	13 years, 3 months ago (May 7, 2012)
Published	13 years, 3 months ago (May 7, 2012)
Published Online	13 years, 3 months ago (May 10, 2012)
Published Print	13 years, 3 months ago (May 7, 2012)

Funders 0

None

BibTeX

@article{Barkhouse_2012, title={Cd-free buffer layer materials on Cu2ZnSn(SxSe1−x)4: Band alignments with ZnO, ZnS, and In2S3}, volume={100}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.4714737}, DOI={10.1063/1.4714737}, number={19}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Barkhouse, D. Aaron R. and Haight, Richard and Sakai, Noriyuki and Hiroi, Homare and Sugimoto, Hiroki and Mitzi, David B.}, year={2012}, month=may }

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