DOI: 10.1063/1.4707383. Low-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealing

Low-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealing

10.1063/1.4707383

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

A technique is presented to selectively graphitize regions of SiC by ion implantation and pulsed laser annealing (PLA). Nanoscale features are patterned over large areas by multi-ion beam lithography and subsequently converted to few-layer graphene via PLA in air. Graphitization occurs only where ions have been implanted and without elevating the temperature of the surrounding substrate. Samples were characterized using Raman spectroscopy, ion scattering/channeling, SEM, and AFM, from which the degree of graphitization was determined to vary with implantation species, damage and dose, laser fluence, and pulsing. Contrasting growth regimes and graphitization mechanisms during PLA are discussed.

Bibliography

Lemaitre, M. G., Tongay, S., Wang, X., Venkatachalam, D. K., Fridmann, J., Gila, B. P., Hebard, A. F., Ren, F., Elliman, R. G., & Appleton, B. R. (2012). Low-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealing. Applied Physics Letters, 100(19).

Authors 10

Maxime G. Lemaitre (first)
Sefaattin Tongay (additional)
Xiaotie Wang (additional)
Dinesh K. Venkatachalam (additional)
Joel Fridmann (additional)
Brent P. Gila (additional)
Arthur F. Hebard (additional)
Fan Ren (additional)
Robert G. Elliman (additional)
Bill R. Appleton (additional)

References 40 Referenced 20

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{'volume-title': 'Proceedings of the Fifth International WLT-Conference on Laser Manufacturing', 'year': '2009', 'key': '2023073108242109200_c27'} / Proceedings of the Fifth International WLT-Conference on Laser Manufacturing (2009)
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{'key': '2023073108242109200_c40'}

Dates

Type	When
Created	13 years, 3 months ago (May 8, 2012, 6:59 p.m.)
Deposited	2 years ago (July 31, 2023, 4:24 a.m.)
Indexed	3 weeks ago (July 30, 2025, 6:59 a.m.)
Issued	13 years, 3 months ago (May 7, 2012)
Published	13 years, 3 months ago (May 7, 2012)
Published Online	13 years, 3 months ago (May 8, 2012)
Published Print	13 years, 3 months ago (May 7, 2012)

Funders 0

None

BibTeX

@article{Lemaitre_2012, title={Low-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealing}, volume={100}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.4707383}, DOI={10.1063/1.4707383}, number={19}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lemaitre, Maxime G. and Tongay, Sefaattin and Wang, Xiaotie and Venkatachalam, Dinesh K. and Fridmann, Joel and Gila, Brent P. and Hebard, Arthur F. and Ren, Fan and Elliman, Robert G. and Appleton, Bill R.}, year={2012}, month=may }

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