Abstract
Our complementary magnetic and photoluminescence measurements reveal the correlation between the donor-acceptor complex and the ferromagnetic order in Cu-doped SnO2 thin films. Oxygen vacancies (VO) and Cu dopants form defect complexes of donor-acceptor pairs, and the associated spin-polarized impurity band leads to the narrowing of bandgap. Electronic structure calculations based on the first-principles method demonstrate that the Cu-VO complex has low formation energy and can stabilize the ferromagnetic coupling. Our results suggest that intrinsic defects and their complexes with dopants play a key role for establishing the ferromagnetic order in doped wide-bandgap oxides.
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Dates
Type | When |
---|---|
Created | 13 years, 4 months ago (April 23, 2012, 6:52 p.m.) |
Deposited | 2 years, 1 month ago (July 5, 2023, 3:20 p.m.) |
Indexed | 1 month ago (July 30, 2025, 6:59 a.m.) |
Issued | 13 years, 4 months ago (April 23, 2012) |
Published | 13 years, 4 months ago (April 23, 2012) |
Published Online | 13 years, 4 months ago (April 23, 2012) |
Published Print | 13 years, 4 months ago (April 23, 2012) |
@article{Li_2012, title={Role of donor-acceptor complexes and impurity band in stabilizing ferromagnetic order in Cu-doped SnO2 thin films}, volume={100}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.4705419}, DOI={10.1063/1.4705419}, number={17}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Li, Yongfeng and Deng, Rui and Tian, Yufeng and Yao, Bin and Wu, Tom}, year={2012}, month=apr }