Abstract
Silicon spontaneously reacts with HF and DF to form the molecules HSiF and DSiF in solid argon. Photolysis of the matrix during deposition greatly enhances the yield of these products. Frequencies for the three infrared active modes of HSiF and DSiF have been accurately measured. The force field of this triatomic molecule has been fully determined through normal coordinate analyses. Thermodynamic functions for the fluorosilylene have been calculated.
References
10
Referenced
34
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Dates
Type | When |
---|---|
Created | 22 years, 6 months ago (Feb. 28, 2003, 11:32 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 9, 2024, 7:15 p.m.) |
Indexed | 1 year, 6 months ago (Feb. 10, 2024, 7:33 p.m.) |
Issued | 43 years ago (Aug. 15, 1982) |
Published | 43 years ago (Aug. 15, 1982) |
Published Print | 43 years ago (Aug. 15, 1982) |
@article{Ismail_1982, title={Matrix isolation studies of the reactions of silicon atoms. II. Infrared spectrum and structure of matrix-isolated fluorosilylene: HSiF}, volume={77}, ISSN={1089-7690}, url={http://dx.doi.org/10.1063/1.444083}, DOI={10.1063/1.444083}, number={4}, journal={The Journal of Chemical Physics}, publisher={AIP Publishing}, author={Ismail, Zakya Kafafi and Fredin, Leif and Hauge, Robert H. and Margrave, John L.}, year={1982}, month=aug, pages={1626–1631} }