DOI: 10.1063/1.373496. Electroluminescence mechanisms in organic light emitting devices employing a europium chelate doped in a wide energy gap bipolar conducting host

Electroluminescence mechanisms in organic light emitting devices employing a europium chelate doped in a wide energy gap bipolar conducting host

10.1063/1.373496

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The mechanism for energy transfer leading to electroluminescence (EL) of a lanthanide complex, Eu(TTA)3phen (TTA=thenoyltrifluoroacetone,phen=1,10-phenanthroline), doped into 4,4′-N,N′-dicarbazole-biphenyl (CBP) host is investigated. With the device structure of anode/hole transport layer/Eu(TTA)3phen(1%):CPB/electron transport layer/cathode, we achieve a maximum external EL quantum efficiency (η) of 1.4% at a current density of 0.4 mA/cm2. Saturated red Eu3+ emission based on D5x–7Fx transitions is centered at a wavelength of 612 nm with a full width at half maximum of 3 nm. From analysis of the electroluminescent and photoluminescent spectra, and the current density–voltage characteristics, we conclude that direct trapping of holes and electrons and subsequent formation of the excitons occurs on the dopant, leading to high quantum efficiencies at low current densities. With increasing current between 1 and 100 mA/cm2, however, a significant decrease of η along with an increase in CBP host emission is observed. We demonstrate that the decrease in η at high current densities can be explained by triplet–triplet annihilation.

Bibliography

Adachi, C., Baldo, M. A., & Forrest, S. R. (2000). Electroluminescence mechanisms in organic light emitting devices employing a europium chelate doped in a wide energy gap bipolar conducting host. Journal of Applied Physics, 87(11), 8049â8055.

Authors 3

Chihaya Adachi (first)
Marc A. Baldo (additional)
Stephen R. Forrest (additional)

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:55 a.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 7:56 p.m.)
Indexed	3 weeks, 5 days ago (Aug. 2, 2025, 1:04 a.m.)
Issued	25 years, 2 months ago (June 1, 2000)
Published	25 years, 2 months ago (June 1, 2000)
Published Print	25 years, 2 months ago (June 1, 2000)

Funders 0

None

BibTeX

@article{Adachi_2000, title={Electroluminescence mechanisms in organic light emitting devices employing a europium chelate doped in a wide energy gap bipolar conducting host}, volume={87}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.373496}, DOI={10.1063/1.373496}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Adachi, Chihaya and Baldo, Marc A. and Forrest, Stephen R.}, year={2000}, month=jun, pages={8049–8055} }

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  "abstract": "<jats:p>The mechanism for energy transfer leading to electroluminescence (EL) of a lanthanide complex, Eu(TTA)3phen\u2008(TTA=thenoyltrifluoroacetone,phen=1,10-phenanthroline), doped into 4,4\u2032-N,N\u2032-dicarbazole-biphenyl (CBP) host is investigated. With the device structure of anode/hole transport layer/Eu(TTA)3phen(1%):CPB/electron transport layer/cathode, we achieve a maximum external EL quantum efficiency (\u03b7) of 1.4% at a current density of 0.4 mA/cm2. Saturated red Eu3+ emission based on D5x\u20137Fx transitions is centered at a wavelength of 612 nm with a full width at half maximum of 3 nm. From analysis of the electroluminescent and photoluminescent spectra, and the current density\u2013voltage characteristics, we conclude that direct trapping of holes and electrons and subsequent formation of the excitons occurs on the dopant, leading to high quantum efficiencies at low current densities. With increasing current between 1 and 100 mA/cm2, however, a significant decrease of \u03b7 along with an increase in CBP host emission is observed. We demonstrate that the decrease in \u03b7 at high current densities can be explained by triplet\u2013triplet annihilation.</jats:p>",
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