Crossref journal-article
AIP Publishing
Journal of Applied Physics (317)
Abstract

An approach giving a physical understanding of the stress-induced leakage current (SILC) generation kinetics based on anode hole injection and hole dispersive transport in the oxide is presented. It is shown that the SILC is not directly correlated to the defects responsible for oxide breakdown. However, it is suggested that trapped holes can impact on the defect creation rate and, in turn, on the breakdown generation.

Bibliography

Riess, P., Ghibaudo, G., & Pananakakis, G. (2000). Stress-induced leakage current generation kinetics based on anode hole injection and hole dispersive transport. Journal of Applied Physics, 87(9), 4626–4628.

Authors 3
  1. P. Riess (first)
  2. G. Ghibaudo (additional)
  3. G. Pananakakis (additional)
References 10 Referenced 7
  1. 10.1063/1.357438 / J. Appl. Phys. (1994)
  2. 10.1063/1.359905 / J. Appl. Phys. (1995)
  3. {'key': '2024020602261101900_r3'}
  4. {'key': '2024020602261101900_r4', 'first-page': '2287', 'volume': '4', 'year': '1993', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1993)
  5. {'key': '2024020602261101900_r5'}
  6. {'key': '2024020602261101900_r6'}
  7. {'key': '2024020602261101900_r7'}
  8. {'key': '2024020602261101900_r8', 'first-page': '1239', 'volume': 'NS-25', 'year': '1978', 'journal-title': 'IEEE Trans. Nucl. Sci.'} / IEEE Trans. Nucl. Sci. (1978)
  9. {'key': '2024020602261101900_r9'}
  10. {'key': '2024020602261101900_r10'}
Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 8:32 a.m.)
Deposited 1 year, 6 months ago (Feb. 5, 2024, 9:26 p.m.)
Indexed 5 months ago (April 2, 2025, 6:23 a.m.)
Issued 25 years, 4 months ago (May 1, 2000)
Published 25 years, 4 months ago (May 1, 2000)
Published Print 25 years, 4 months ago (May 1, 2000)
Funders 0

None

@article{Riess_2000, title={Stress-induced leakage current generation kinetics based on anode hole injection and hole dispersive transport}, volume={87}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.373114}, DOI={10.1063/1.373114}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Riess, P. and Ghibaudo, G. and Pananakakis, G.}, year={2000}, month=may, pages={4626–4628} }