Abstract
An approach giving a physical understanding of the stress-induced leakage current (SILC) generation kinetics based on anode hole injection and hole dispersive transport in the oxide is presented. It is shown that the SILC is not directly correlated to the defects responsible for oxide breakdown. However, it is suggested that trapped holes can impact on the defect creation rate and, in turn, on the breakdown generation.
References
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 8:32 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 5, 2024, 9:26 p.m.) |
Indexed | 5 months ago (April 2, 2025, 6:23 a.m.) |
Issued | 25 years, 4 months ago (May 1, 2000) |
Published | 25 years, 4 months ago (May 1, 2000) |
Published Print | 25 years, 4 months ago (May 1, 2000) |
@article{Riess_2000, title={Stress-induced leakage current generation kinetics based on anode hole injection and hole dispersive transport}, volume={87}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.373114}, DOI={10.1063/1.373114}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Riess, P. and Ghibaudo, G. and Pananakakis, G.}, year={2000}, month=may, pages={4626–4628} }