DOI: 10.1063/1.372297. Influence of strain on microwave dielectric properties of (Ba,Sr)TiO3 thin films

Influence of strain on microwave dielectric properties of (Ba,Sr)TiO3 thin films

10.1063/1.372297

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Epitaxial Ba1−xSrxTiO3 (BST) thin films have been deposited onto (100)MgO and LaAlO3 substrates using pulsed-laser deposition. Thick (&gt;1 μm) Ag interdigitated capacitors capped with a thin protective layer of Au have been deposited on top of the BST films using electron-beam deposition. The capacitance (C) and dielectric quality factor (Q=1/tan δ) of the structure has been measured at microwave frequencies (1–20 GHz) as a function of electric field (E⩽67 kV/cm) at room temperature. In epitaxial BST films, either high dielectric tuning (4:1), which is defined as {[C(0)−C(E)]/C(0)}×100, or high dielectric Q (∼100–250) was observed but not both at the same time. Film strain was observed by x-ray diffraction and is closely related to the dielectric properties as limiting the ability to obtain both high tuning and high dielectric Q in epitaxial BST thin films. A thin BST buffer layer was used to relieve the strain in the films. In strain-relieved films, both dielectric tuning and dielectric Q were increased after annealing. A theoretical analysis of the strain effect of the films is presented based on Devonshire thermodynamic theory.

Bibliography

Chang, W., Gilmore, C. M., Kim, W.-J., Pond, J. M., Kirchoefer, S. W., Qadri, S. B., Chirsey, D. B., & Horwitz, J. S. (2000). Influence of strain on microwave dielectric properties of (Ba,Sr)TiO3 thin films. Journal of Applied Physics, 87(6), 3044â3049.

Authors 8

Wontae Chang (first)
Charles M. Gilmore (additional)
Won-Jeong Kim (additional)
Jeffrey M. Pond (additional)
Steven W. Kirchoefer (additional)
Syed B. Qadri (additional)
Douglas B. Chirsey (additional)
James S. Horwitz (additional)

References 27 Referenced 181

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:55 a.m.)
Deposited	1 year, 6 months ago (Feb. 10, 2024, 1:30 p.m.)
Indexed	2 months ago (June 24, 2025, 7:28 a.m.)
Issued	25 years, 5 months ago (March 15, 2000)
Published	25 years, 5 months ago (March 15, 2000)
Published Print	25 years, 5 months ago (March 15, 2000)

Funders 0

None

BibTeX

@article{Chang_2000, title={Influence of strain on microwave dielectric properties of (Ba,Sr)TiO3 thin films}, volume={87}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.372297}, DOI={10.1063/1.372297}, number={6}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Chang, Wontae and Gilmore, Charles M. and Kim, Won-Jeong and Pond, Jeffrey M. and Kirchoefer, Steven W. and Qadri, Syed B. and Chirsey, Douglas B. and Horwitz, James S.}, year={2000}, month=mar, pages={3044–3049} }

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  "abstract": "<jats:p>Epitaxial Ba1\u2212xSrxTiO3 (BST) thin films have been deposited onto (100)MgO and LaAlO3 substrates using pulsed-laser deposition. Thick (&amp;gt;1 \u03bcm) Ag interdigitated capacitors capped with a thin protective layer of Au have been deposited on top of the BST films using electron-beam deposition. The capacitance (C) and dielectric quality factor (Q=1/tan\u200a\u03b4) of the structure has been measured at microwave frequencies (1\u201320 GHz) as a function of electric field (E\u2a7d67\u200akV/cm) at room temperature. In epitaxial BST films, either high dielectric tuning (4:1), which is defined as {[C(0)\u2212C(E)]/C(0)}\u00d7100, or high dielectric Q (\u223c100\u2013250) was observed but not both at the same time. Film strain was observed by x-ray diffraction and is closely related to the dielectric properties as limiting the ability to obtain both high tuning and high dielectric Q in epitaxial BST thin films. A thin BST buffer layer was used to relieve the strain in the films. In strain-relieved films, both dielectric tuning and dielectric Q were increased after annealing. A theoretical analysis of the strain effect of the films is presented based on Devonshire thermodynamic theory.</jats:p>",
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