Crossref journal-article
AIP Publishing
Journal of Applied Physics (317)
Abstract

A theoretical model for tunnel leakage current through 1.65–3.90-nm-thick gate oxides in metal-oxide-semiconductor structures has been developed. The electron effective mass in the oxide layer and the Fermi energy in the n+ poly-Si gate are the only two fitting parameters. It is shown that the calculated tunnel current is well fitted to the measured one over the entire oxide thickness range when the nonparabolic E-k dispersion relationship for the oxide band gap is employed. The electron effective mass in the oxide layer tends to increase as the oxide thickness decreases to less than 2.80 nm presumably due to the existence of compressive stress in the oxide layer near the SiO2/Si(100) interface.

Bibliography

Khairurrijal, Mizubayashi, W., Miyazaki, S., & Hirose, M. (2000). Analytic model of direct tunnel current through ultrathin gate oxides. Journal of Applied Physics, 87(6), 3000–3005.

Authors 4
  1. Khairurrijal (first)
  2. W. Mizubayashi (additional)
  3. S. Miyazaki (additional)
  4. M. Hirose (additional)
References 37 Referenced 65
  1. {'key': '2024021018043045600_r1', 'first-page': '1233', 'volume': 'ED-43', 'year': '1996', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1996)
  2. {'key': '2024021018043045600_r2'}
  3. 10.1016/0022-3697(66)90238-1 / J. Phys. Chem. Solids (1966)
  4. 10.1063/1.1655275 / Appl. Phys. Lett. (1974)
  5. 10.1143/JJAP.33.395 / Jpn. J. Appl. Phys., Part 1 (1994)
  6. 10.1143/JJAP.34.L903 / Jpn. J. Appl. Phys., Part 2 (1995)
  7. 10.1063/1.117692 / Appl. Phys. Lett. (1996)
  8. 10.1016/0038-1101(84)90055-8 / Solid-State Electron. (1984)
  9. 10.1063/1.117072 / Appl. Phys. Lett. (1996)
  10. {'key': '2024021018043045600_r10', 'first-page': '209', 'volume': 'EDL-18', 'year': '1997', 'journal-title': 'IEEE Electron Device Lett.'} / IEEE Electron Device Lett. (1997)
  11. 10.1063/1.356116 / J. Appl. Phys. (1994)
  12. 10.1063/1.365364 / J. Appl. Phys. (1997)
  13. 10.1016/S0169-4332(96)00805-7 / Appl. Surf. Sci. (1997)
  14. 10.1557/PROC-222-225 / Mater. Res. Soc. Symp. Proc. (1991)
  15. 10.1103/PhysRevLett.80.345 / Phys. Rev. Lett. (1998)
  16. 10.1103/PhysRev.123.85 / Phys. Rev. (1961)
  17. {'key': '2024021018043045600_r17'}
  18. 10.1103/PhysRev.152.683 / Phys. Rev. (1966)
  19. 10.1016/0038-1101(71)90165-1 / Solid-State Electron. (1971)
  20. {'key': '2024021018043045600_r20'}
  21. {'key': '2024021018043045600_r21', 'first-page': '1760', 'volume': 'ED-30', 'year': '1983', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1983)
  22. 10.1103/PhysRev.102.1464 / Phys. Rev. (1956)
  23. 10.1103/PhysRevB.5.4891 / Phys. Rev. B (1972)
  24. {'key': '2024021018043045600_r24'}
  25. 10.1143/JJAP.36.L1541 / Jpn. J. Appl. Phys., Part 2 (1997)
  26. 10.1143/JJAP.37.L1534 / Jpn. J. Appl. Phys., Part 2 (1998)
  27. {'key': '2024021018043045600_r27'}
  28. {'key': '2024021018043045600_r28'}
  29. 10.1063/1.123060 / Appl. Phys. Lett. (1999)
  30. 10.1143/JJAP.35.L67 / Jpn. J. Appl. Phys., Part 2 (1996)
  31. {'key': '2024021018043045600_r31'}
  32. 10.1016/0038-1101(74)90023-9 / Solid-State Electron. (1974)
  33. 10.1016/0038-1101(91)90149-S / Solid-State Electron. (1991)
  34. 10.1103/PhysRevLett.6.57 / Phys. Rev. Lett. (1961)
  35. 10.1103/PhysRev.140.A179 / Phys. Rev. A (1965)
  36. 10.1063/1.332319 / J. Appl. Phys. (1983)
  37. {'key': '2024021018043045600_r37', 'first-page': '3283', 'volume': '35', 'year': '1964', 'journal-title': 'J. Phys. Chem. Solids'} / J. Phys. Chem. Solids (1964)
Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 9:55 a.m.)
Deposited 1 year, 6 months ago (Feb. 10, 2024, 1:27 p.m.)
Indexed 2 months, 3 weeks ago (June 6, 2025, 5:08 a.m.)
Issued 25 years, 5 months ago (March 15, 2000)
Published 25 years, 5 months ago (March 15, 2000)
Published Print 25 years, 5 months ago (March 15, 2000)
Funders 0

None

@article{Khairurrijal_2000, title={Analytic model of direct tunnel current through ultrathin gate oxides}, volume={87}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.372290}, DOI={10.1063/1.372290}, number={6}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Khairurrijal and Mizubayashi, W. and Miyazaki, S. and Hirose, M.}, year={2000}, month=mar, pages={3000–3005} }