Abstract
The series resistance of InGaAsP/InP multiple quantum well ridge waveguide laser diodes is investigated experimentally over a wide temperature range for both Fabry–Perot and distributed feedback type lasers. From the temperature dependence of the series resistance is found that it is defined mostly by the resistance of heterobarriers, although the semiconductor bulk resistance is also found to be a substantial part of ridge waveguide laser series resistance. The effect of the laser series resistance on other performance characteristics also investigated. The theoretically predicted strong correlation between the series resistance and laser maximum operating power is confirmed experimentally. The ways of reducing of series resistance are discussed.
References
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 8:29 a.m.) |
Deposited | 2 years, 1 month ago (July 4, 2023, 10:50 p.m.) |
Indexed | 2 months, 1 week ago (June 26, 2025, 8:46 a.m.) |
Issued | 25 years, 8 months ago (Jan. 1, 2000) |
Published | 25 years, 8 months ago (Jan. 1, 2000) |
Published Print | 25 years, 8 months ago (Jan. 1, 2000) |
@article{Elenkrig_2000, title={Series resistance and its effect on the maximum output power of 1.5 μm strained-layer multiple-quantum-well ridge waveguide InGaAsP lasers}, volume={87}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.371817}, DOI={10.1063/1.371817}, number={1}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Elenkrig, B. B. and Smetona, S. and Simmons, J. G. and Takasaki, B. and Evans, J. D. and Makino, T.}, year={2000}, month=jan, pages={1–4} }