DOI: 10.1063/1.371631. Grain-size effect on pressure-induced semiconductor-to-metal transition in ZnS

Grain-size effect on pressure-induced semiconductor-to-metal transition in ZnS

10.1063/1.371631

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The grain-size effect on the semiconductor-to-metal transition in ZnS has been investigated by in situ high-pressure electrical resistance and optical measurements. It is found that the grain-size effect can elevate the transition pressure of ZnS in a larger pressure range. On the basis of the results obtained and results reported in the literature, we demonstrate that the dangers of using the transition pressures of the II–VI compounds as pressure calibrators without a detailed knowledge of their grain-size effects on the transition pressures cannot be overstressed.

Bibliography

Jiang, J. Z., Gerward, L., Frost, D., Secco, R., Peyronneau, J., & Olsen, J. S. (1999). Grain-size effect on pressure-induced semiconductor-to-metal transition in ZnS. Journal of Applied Physics, 86(11), 6608â6610.

Authors 6

J. Z. Jiang (first)
L. Gerward (additional)
D. Frost (additional)
R. Secco (additional)
J. Peyronneau (additional)
J. S. Olsen (additional)

References 10 Referenced 71

10.1126/science.280.5368.1415 / Science (1998)
10.1063/1.331315 / J. Appl. Phys. (1982)
{'key': '2024021008262350200_r3', 'first-page': '273', 'volume': '73', 'year': '1995', 'journal-title': 'Can. J. Phys.'} / Can. J. Phys. (1995)
10.1126/science.265.5170.373 / Science (1994)
10.1063/1.469512 / J. Chem. Phys. (1995)
{'key': '2024021008262350200_r6', 'first-page': '4385', 'volume': '76', 'year': '1996', 'journal-title': 'Phys. Rev. Lett.'} / Phys. Rev. Lett. (1996)
{'key': '2024021008262350200_r7'}
10.1063/1.117166 / Appl. Phys. Lett. (1996)
10.1209/epl/i1998-00563-6 / Europhys. Lett. (1998)
10.1016/S0022-3697(98)00274-1 / J. Phys. Chem. Solids (1999)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:55 a.m.)
Deposited	1 year, 6 months ago (Feb. 10, 2024, 5:13 a.m.)
Indexed	1 month, 3 weeks ago (July 2, 2025, 1:51 p.m.)
Issued	25 years, 8 months ago (Dec. 1, 1999)
Published	25 years, 8 months ago (Dec. 1, 1999)
Published Print	25 years, 8 months ago (Dec. 1, 1999)

Funders 0

None

BibTeX

@article{Jiang_1999, title={Grain-size effect on pressure-induced semiconductor-to-metal transition in ZnS}, volume={86}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.371631}, DOI={10.1063/1.371631}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Jiang, J. Z. and Gerward, L. and Frost, D. and Secco, R. and Peyronneau, J. and Olsen, J. S.}, year={1999}, month=dec, pages={6608–6610} }

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