Abstract
We show that incorporation of nitrogen in Ga1−xInxAs to form Ga1−xInxNyAs1−y alloys leads to a splitting of the conduction band into two nonparabolic subbands. The splitting can be described in terms of an anticrossing interaction between a narrow band of localized nitrogen states and the extended conduction-band states of the semiconductor matrix. The downward shift of the lower subband edge accounts for the N-induced reduction of the fundamental band-gap energy. An analysis of the relationship between the subband splitting and the band-gap reduction demonstrates that the energetic location of the valence band is nearly independent of the N content in Ga1−xInxNyAs1−y alloys.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:55 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 5, 2024, 11:07 p.m.) |
Indexed | 3 months, 2 weeks ago (May 16, 2025, 8:06 a.m.) |
Issued | 26 years ago (Aug. 15, 1999) |
Published | 26 years ago (Aug. 15, 1999) |
Published Print | 26 years ago (Aug. 15, 1999) |
@article{Shan_1999, title={Effect of nitrogen on the band structure of GaInNAs alloys}, volume={86}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.371148}, DOI={10.1063/1.371148}, number={4}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Shan, W. and Walukiewicz, W. and Ager, J. W. and Haller, E. E. and Geisz, J. F. and Friedman, D. J. and Olson, J. M. and Kurtz, Sarah R.}, year={1999}, month=aug, pages={2349–2351} }