Crossref journal-article
AIP Publishing
Journal of Applied Physics (317)
Abstract

We show that incorporation of nitrogen in Ga1−xInxAs to form Ga1−xInxNyAs1−y alloys leads to a splitting of the conduction band into two nonparabolic subbands. The splitting can be described in terms of an anticrossing interaction between a narrow band of localized nitrogen states and the extended conduction-band states of the semiconductor matrix. The downward shift of the lower subband edge accounts for the N-induced reduction of the fundamental band-gap energy. An analysis of the relationship between the subband splitting and the band-gap reduction demonstrates that the energetic location of the valence band is nearly independent of the N content in Ga1−xInxNyAs1−y alloys.

Authors 8
  1. W. Shan (first)
  2. W. Walukiewicz (additional)
  3. J. W. Ager (additional)
  4. E. E. Haller (additional)
  5. J. F. Geisz (additional)
  6. D. J. Friedman (additional)
  7. J. M. Olson (additional)
  8. Sarah R. Kurtz (additional)
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 9:55 a.m.)
Deposited 1 year, 6 months ago (Feb. 5, 2024, 11:07 p.m.)
Indexed 3 months, 2 weeks ago (May 16, 2025, 8:06 a.m.)
Issued 26 years ago (Aug. 15, 1999)
Published 26 years ago (Aug. 15, 1999)
Published Print 26 years ago (Aug. 15, 1999)
Funders 0

None

@article{Shan_1999, title={Effect of nitrogen on the band structure of GaInNAs alloys}, volume={86}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.371148}, DOI={10.1063/1.371148}, number={4}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Shan, W. and Walukiewicz, W. and Ager, J. W. and Haller, E. E. and Geisz, J. F. and Friedman, D. J. and Olson, J. M. and Kurtz, Sarah R.}, year={1999}, month=aug, pages={2349–2351} }