DOI: 10.1063/1.371145. GaN: Processing, defects, and devices

10.1063/1.371145

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation, and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes, and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

Bibliography

Pearton, S. J., Zolper, J. C., Shul, R. J., & Ren, F. (1999). GaN: Processing, defects, and devices. Journal of Applied Physics, 86(1), 1â78.

Authors 4

S. J. Pearton (first)
J. C. Zolper (additional)
R. J. Shul (additional)
F. Ren (additional)

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:46 a.m.)
Deposited	1 year, 6 months ago (Feb. 6, 2024, 6:44 p.m.)
Indexed	1 week, 2 days ago (Aug. 23, 2025, 9:27 p.m.)
Issued	26 years, 2 months ago (July 1, 1999)
Published	26 years, 2 months ago (July 1, 1999)
Published Print	26 years, 2 months ago (July 1, 1999)

Funders 0

None

BibTeX

@article{Pearton_1999, title={GaN: Processing, defects, and devices}, volume={86}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.371145}, DOI={10.1063/1.371145}, number={1}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Pearton, S. J. and Zolper, J. C. and Shul, R. J. and Ren, F.}, year={1999}, month=jul, pages={1–78} }

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