DOI: 10.1063/1.370880. Kinetic analysis of interfacial diffusion accompanied by intermetallic compound formation

Kinetic analysis of interfacial diffusion accompanied by intermetallic compound formation

10.1063/1.370880

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

In interfacial reactions, a short-circuit diffusion along grain boundaries or interfaces can be accompanied by intermetallic compound formation. The compound penetrates the grain boundaries or the interfaces. This is a generic reliability issue for layered thin film structures because it causes a decrease in adhesion strength of the thin films. We have modified Fisher’s grain boundary diffusion model to include this reactive kinetic process, and an analytical solution was obtained. A t1/4 dependence of penetration is found, the same as Fisher’s model. The important kinetic parameters in the solutions are a diffusion coefficient along the short-circuit path, an intrinsic interdiffusion coefficient in the compound, and a partition coefficient. A comparison between the calculated and measured data from the lateral penetration of eutectic SnPb solder along the interface between electroless Ni and oxysilicon nitride dielectric, accompanied by Ni3Sn4 compound formation, is given.

Bibliography

Kim, P. G., Jang, J. W., Tu, K. N., & Frear, D. R. (1999). Kinetic analysis of interfacial diffusion accompanied by intermetallic compound formation. Journal of Applied Physics, 86(3), 1266â1272.

Authors 4

P. G. Kim (first)
J. W. Jang (additional)
K. N. Tu (additional)
D. R. Frear (additional)

References 27 Referenced 18

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{'key': '2024021104335786500_r15'}
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:55 a.m.)
Deposited	1 year, 6 months ago (Feb. 10, 2024, 11:34 p.m.)
Indexed	5 months, 1 week ago (March 24, 2025, 2:31 a.m.)
Issued	26 years, 1 month ago (Aug. 1, 1999)
Published	26 years, 1 month ago (Aug. 1, 1999)
Published Print	26 years, 1 month ago (Aug. 1, 1999)

Funders 0

None

BibTeX

@article{Kim_1999, title={Kinetic analysis of interfacial diffusion accompanied by intermetallic compound formation}, volume={86}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.370880}, DOI={10.1063/1.370880}, number={3}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Kim, P. G. and Jang, J. W. and Tu, K. N. and Frear, D. R.}, year={1999}, month=aug, pages={1266–1272} }

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