DOI: 10.1063/1.370837. Microstructure evolution study of Pd

Microstructure evolution study of Pd–Ge ohmic contact formation on GaAs

10.1063/1.370837

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The microstructure evolution and the corresponding solid-state reactions that take place during the formation of the Pd–Ge ohmic contacts on GaAs were studied using constant-heating-rate differential calorimetry (DSC) and cross-sectional transmission electron microscopy (XTEM). DSC analysis at different scan rates was performed on Pd(20 nm)/Ge(150 nm)/Pd(50 nm) thin film stacks that were lifted off the substrate and four solid-state reactions were identified. Specimens heated at temperatures that coincide with the DSC peaks were quenched in a He atmosphere and the resulting microstructure was characterized by XTEM. Variable constant-heating-rate DSC experiments allowed us to determine the activation energy associated with each solid-state reaction by the Kissinger plot method. The results were as follows: for Pd:Ge interdiffuson, the activation energy Q=1.03 eV, for hexagonal Pd2Ge formation Q=1.12 eV, for orthorhombic PdGe formation Q=1.33 eV and for Ge crystallization Q=1.8 eV. Based on these correlations, the mechanisms that contribute to the formation of an optimal ohmic contact microstructure were identified.

Bibliography

Radulescu, F., & McCarthy, J. M. (1999). Microstructure evolution study of PdâGe ohmic contact formation on GaAs. Journal of Applied Physics, 86(2), 995â998.

Authors 2

F. Radulescu (first)
J. M. McCarthy (additional)

References 15 Referenced 6

10.1063/1.339705 / J. Appl. Phys. (1987)
10.1063/1.365973 / J. Appl. Phys. (1997)
10.1557/JMR.1987.0262 / J. Mater. Res. (1987)
10.1016/0040-6090(77)90359-5 / Thin Solid Films (1977)
10.1557/PROC-148-163 / Mater. Res. Soc. Symp. Proc. (1989)
10.1063/1.99644 / Appl. Phys. Lett. (1988)
10.1016/0040-6031(80)87103-6 / Thermochim. Acta (1980)
{'key': '2024020702523958100_r8', 'first-page': '23', 'volume': '254', 'year': '1992', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. (1992)
{'key': '2024020702523958100_r9', 'first-page': '367', 'volume': '54', 'year': '1992', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. (1992)
10.1063/1.345258 / J. Appl. Phys. (1990)
10.1063/1.356263 / J. Appl. Phys. (1994)
10.1016/0921-5107(96)01580-2 / Mater. Sci. Eng., B (1996)
10.1021/ac60131a045 / Anal. Chem. (1957)
10.1063/1.325855 / J. Appl. Phys. (1979)
10.1063/1.351994 / J. Appl. Phys. (1992)

Dates

Type	When
Created	23 years ago (July 26, 2002, 8:26 a.m.)
Deposited	1 year, 6 months ago (Feb. 7, 2024, 12:13 a.m.)
Indexed	1 year, 6 months ago (Feb. 15, 2024, 6:39 a.m.)
Issued	26 years, 1 month ago (July 15, 1999)
Published	26 years, 1 month ago (July 15, 1999)
Published Print	26 years, 1 month ago (July 15, 1999)

Funders 0

None

BibTeX

@article{Radulescu_1999, title={Microstructure evolution study of Pd–Ge ohmic contact formation on GaAs}, volume={86}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.370837}, DOI={10.1063/1.370837}, number={2}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Radulescu, F. and McCarthy, J. M.}, year={1999}, month=jul, pages={995–998} }

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