DOI: 10.1063/1.370744. Optical properties of epitaxially grown zinc oxide films on sapphire by pulsed laser deposition

Optical properties of epitaxially grown zinc oxide films on sapphire by pulsed laser deposition

10.1063/1.370744

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

ZnO thin films were epitaxially grown on c-sapphire substrates by pulsed laser deposition at substrate temperatures of 500–800 °C. The crystal structure of ZnO films follow the epitaxial relationship of (0001)ZnO∥(0001)Al2O3(101̄0)ZnO∥(112̄0)Al2O3. Both room temperature and cryogenic temperature photoluminescence showed a remarkable band-edge transition, and clear excitonic structures could be seen at cryogenic temperature. The optical refractive index was measured in the range of 375–900 nm by varying angle spectroscopic ellipsometry. The simulation was carried out using a Sellmeier equation.

Bibliography

Sun, X. W., & Kwok, H. S. (1999). Optical properties of epitaxially grown zinc oxide films on sapphire by pulsed laser deposition. Journal of Applied Physics, 86(1), 408â411.

Authors 2

X. W. Sun (first)
H. S. Kwok (additional)

References 24 Referenced 480

10.1063/1.342419 / J. Appl. Phys. (1988)
10.1116/1.580430 / J. Vac. Sci. Technol. A (1997)
10.1116/1.570167 / J. Vac. Sci. Technol. (1979)
10.1143/JJAP.32.2337 / Jpn. J. Appl. Phys., Part 1 (1993)
10.1109/58.658325 / IEEE Trans. Ultrason. Ferroelectr. Freq. (1997)
10.1016/0250-6874(89)87034-9 / Sens. Actuators (1989)
10.1143/JJAP.34.L1332 / Jpn. J. Appl. Phys., Part 2 (1995)
10.1063/1.115599 / Appl. Phys. Lett. (1996)
10.1063/1.108110 / Appl. Phys. Lett. (1992)
10.1016/0022-0248(93)90353-X / J. Cryst. Growth (1993)
10.1063/1.363302 / J. Appl. Phys. (1996)
10.1116/1.580535 / J. Vac. Sci. Technol. A (1997)
10.1063/1.119006 / Appl. Phys. Lett. (1997)
{'key': '2024020619240170300_r9', 'first-page': '367', 'volume-title': 'III-V Nitrides', 'author': 'Ponce', 'year': '1997'} / III-V Nitrides by Ponce (1997)
10.1016/S0038-1098(96)00697-7 / Solid State Commun. (1997)
{'key': '2024020619240170300_r11'}
10.1063/1.118824 / Appl. Phys. Lett. (1997)
10.1016/S0169-4332(96)00640-X / Appl. Surf. Sci. (1997)
{'key': '2024020619240170300_r14'}
10.1016/S0038-1098(97)00216-0 / Solid State Commun. (1997)
10.1103/PhysRevB.38.9746 / Phys. Rev. B (1988)
10.1063/1.362349 / J. Appl. Phys. (1996)
10.1063/1.119157 / Appl. Phys. Lett. (1997)
{'key': '2024020619240170300_r19'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:55 a.m.)
Deposited	1 year, 6 months ago (Feb. 6, 2024, 6:32 p.m.)
Indexed	1 month, 2 weeks ago (July 16, 2025, 8:46 a.m.)
Issued	26 years, 2 months ago (July 1, 1999)
Published	26 years, 2 months ago (July 1, 1999)
Published Print	26 years, 2 months ago (July 1, 1999)

Funders 0

None

BibTeX

@article{Sun_1999, title={Optical properties of epitaxially grown zinc oxide films on sapphire by pulsed laser deposition}, volume={86}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.370744}, DOI={10.1063/1.370744}, number={1}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Sun, X. W. and Kwok, H. S.}, year={1999}, month=jul, pages={408–411} }

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