DOI: 10.1063/1.370723. Strain characterization of polycrystalline diamond and silicon systems

Strain characterization of polycrystalline diamond and silicon systems

10.1063/1.370723

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The phonon deformation potentials of polycrystalline diamond and silicon, derived through the Voigt–Reuss–Hill averaging technique, are used to establish the systematics of strain characterization of polycrystalline films, considering all possible stress configurations. The results are compared to Raman data from the literature.

Bibliography

Anastassakis, E. (1999). Strain characterization of polycrystalline diamond and silicon systems. Journal of Applied Physics, 86(1), 249â258.

Authors 1

E. Anastassakis (first)

References 28 Referenced 70

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:55 a.m.)
Deposited	1 year, 6 months ago (Feb. 6, 2024, 6:34 p.m.)
Indexed	1 month ago (Aug. 2, 2025, 12:10 a.m.)
Issued	26 years, 2 months ago (July 1, 1999)
Published	26 years, 2 months ago (July 1, 1999)
Published Print	26 years, 2 months ago (July 1, 1999)

Funders 0

None

BibTeX

@article{Anastassakis_1999, title={Strain characterization of polycrystalline diamond and silicon systems}, volume={86}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.370723}, DOI={10.1063/1.370723}, number={1}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Anastassakis, E.}, year={1999}, month=jul, pages={249–258} }

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