DOI: 10.1063/1.370706. Two-dimensional surface band structure of operating light emitting devices

Two-dimensional surface band structure of operating light emitting devices

10.1063/1.370706

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

We report on measurements of two-dimensional potential distribution with nanometer spatial resolution of operating light emitting diodes. By measuring the contact potential difference between an atomic force microscope tip and the cleaved surface of the light emitting diode, we were able to measure the device surface potential distribution. These measurements enable us to accurately locate the metallurgical junction of the light emitting device, and to measure the dependence of the built-in voltage on applied external bias. As the device is forward biased, the junction built-in voltage decreases up to flat band conditions, and then inverted. It is shown that the potential distribution across the pn junction is governed by self-absorption of the sub-bandgap diode emission.

Bibliography

Shikler, R., Meoded, T., Fried, N., Mishori, B., & Rosenwaks, Y. (1999). Two-dimensional surface band structure of operating light emitting devices. Journal of Applied Physics, 86(1), 107â113.

Authors 5

R. Shikler (first)
T. Meoded (additional)
N. Fried (additional)
B. Mishori (additional)
Y. Rosenwaks (additional)

References 19 Referenced 48

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10.1063/1.113780 / Appl. Phys. Lett. (1995)
{'key': '2024020619385508400_r3', 'first-page': '2358', 'volume': '77', 'year': '1995', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1995)
10.1063/1.114344 / Appl. Phys. Lett. (1995)
10.1109/55.622517 / IEEE Electron Device Lett. (1997)
10.1063/1.98877 / Appl. Phys. Lett. (1987)
10.1116/1.585585 / J. Vac. Sci. Technol. B (1991)
{'key': '2024020619385508400_r8'}
{'key': '2024020619385508400_r9', 'first-page': '83', 'volume': '15', 'year': '1972', 'journal-title': 'Solid-State Electron.'} / Solid-State Electron. (1972)
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{'key': '2024020619385508400_r11', 'first-page': '83', 'volume': '62', 'year': '1992', 'journal-title': 'Appl. Surf. Sci.'} / Appl. Surf. Sci. (1992)
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{'key': '2024020619385508400_r14'}
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{'key': '2024020619385508400_r16'}
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{'key': '2024020619385508400_r19', 'first-page': '431', 'volume': '27', 'year': '1993', 'journal-title': 'Semiconductors'} / Semiconductors (1993)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:41 a.m.)
Deposited	1 year, 6 months ago (Feb. 6, 2024, 6:40 p.m.)
Indexed	5 months ago (April 4, 2025, 8:27 a.m.)
Issued	26 years, 2 months ago (July 1, 1999)
Published	26 years, 2 months ago (July 1, 1999)
Published Print	26 years, 2 months ago (July 1, 1999)

Funders 0

None

BibTeX

@article{Shikler_1999, title={Two-dimensional surface band structure of operating light emitting devices}, volume={86}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.370706}, DOI={10.1063/1.370706}, number={1}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Shikler, R. and Meoded, T. and Fried, N. and Mishori, B. and Rosenwaks, Y.}, year={1999}, month=jul, pages={107–113} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        4,
        4
      ]
    ],
    "date-time": "2025-04-04T12:27:05Z",
    "timestamp": 1743769625642
  },
  "reference-count": 19,
  "publisher": "AIP Publishing",
  "issue": "1",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1999,
        7,
        1
      ]
    ]
  },
  "abstract": "<jats:p>We report on measurements of two-dimensional potential distribution with nanometer spatial resolution of operating light emitting diodes. By measuring the contact potential difference between an atomic force microscope tip and the cleaved surface of the light emitting diode, we were able to measure the device surface potential distribution. These measurements enable us to accurately locate the metallurgical junction of the light emitting device, and to measure the dependence of the built-in voltage on applied external bias. As the device is forward biased, the junction built-in voltage decreases up to flat band conditions, and then inverted. It is shown that the potential distribution across the pn junction is governed by self-absorption of the sub-bandgap diode emission.</jats:p>",
  "DOI": "10.1063/1.370706",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:41:21Z",
    "timestamp": 1027690881000
  },
  "page": "107-113",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 48,
  "title": "Two-dimensional surface band structure of operating light emitting devices",
  "prefix": "10.1063",
  "volume": "86",
  "author": [
    {
      "given": "R.",
      "family": "Shikler",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Department of Physical Electronics, Faculty of Engineering, Tel-Aviv University, Ramat-Aviv\u200969978, Israel"
        }
      ]
    },
    {
      "given": "T.",
      "family": "Meoded",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Physical Electronics, Faculty of Engineering, Tel-Aviv University, Ramat-Aviv\u200969978, Israel"
        }
      ]
    },
    {
      "given": "N.",
      "family": "Fried",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Physical Electronics, Faculty of Engineering, Tel-Aviv University, Ramat-Aviv\u200969978, Israel"
        }
      ]
    },
    {
      "given": "B.",
      "family": "Mishori",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Physical Electronics, Faculty of Engineering, Tel-Aviv University, Ramat-Aviv\u200969978, Israel"
        }
      ]
    },
    {
      "given": "Y.",
      "family": "Rosenwaks",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Physical Electronics, Faculty of Engineering, Tel-Aviv University, Ramat-Aviv\u200969978, Israel"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020619385508400_r1",
      "first-page": "2091",
      "volume": "58",
      "year": "1991",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020619385508400_r2",
      "doi-asserted-by": "crossref",
      "first-page": "3510",
      "DOI": "10.1063/1.113780",
      "volume": "66",
      "year": "1995",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020619385508400_r3",
      "first-page": "2358",
      "volume": "77",
      "year": "1995",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020619385508400_r4",
      "doi-asserted-by": "crossref",
      "first-page": "2358",
      "DOI": "10.1063/1.114344",
      "volume": "67",
      "year": "1995",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020619385508400_r5",
      "doi-asserted-by": "crossref",
      "first-page": "423",
      "DOI": "10.1109/55.622517",
      "volume": "18",
      "year": "1997",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "2024020619385508400_r6",
      "doi-asserted-by": "crossref",
      "first-page": "33",
      "DOI": "10.1063/1.98877",
      "volume": "51",
      "year": "1987",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020619385508400_r7",
      "doi-asserted-by": "crossref",
      "first-page": "431",
      "DOI": "10.1116/1.585585",
      "volume": "9",
      "year": "1991",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2024020619385508400_r8"
    },
    {
      "key": "2024020619385508400_r9",
      "first-page": "83",
      "volume": "15",
      "year": "1972",
      "journal-title": "Solid-State Electron."
    },
    {
      "key": "2024020619385508400_r10",
      "doi-asserted-by": "crossref",
      "first-page": "109",
      "DOI": "10.1016/0038-1101(88)90093-7",
      "volume": "31",
      "year": "1988",
      "journal-title": "Solid-State Electron."
    },
    {
      "key": "2024020619385508400_r11",
      "first-page": "83",
      "volume": "62",
      "year": "1992",
      "journal-title": "Appl. Surf. Sci."
    },
    {
      "key": "2024020619385508400_r12",
      "doi-asserted-by": "crossref",
      "first-page": "71",
      "DOI": "10.1016/0169-4332(94)90033-7",
      "volume": "78",
      "year": "1994",
      "journal-title": "Appl. Surf. Sci."
    },
    {
      "key": "2024020619385508400_r13",
      "doi-asserted-by": "crossref",
      "first-page": "879",
      "DOI": "10.1063/1.116217",
      "volume": "68",
      "year": "1996",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020619385508400_r14"
    },
    {
      "key": "2024020619385508400_r15",
      "first-page": "195",
      "volume": "59",
      "year": "1986",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020619385508400_r16"
    },
    {
      "key": "2024020619385508400_r17",
      "doi-asserted-by": "crossref",
      "first-page": "458",
      "DOI": "10.1063/1.103665",
      "volume": "57",
      "year": "1990",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020619385508400_r18",
      "doi-asserted-by": "crossref",
      "first-page": "379",
      "DOI": "10.1007/BF02659702",
      "volume": "24",
      "year": "1995",
      "journal-title": "J. Electron. Mater."
    },
    {
      "key": "2024020619385508400_r19",
      "first-page": "431",
      "volume": "27",
      "year": "1993",
      "journal-title": "Semiconductors"
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/86/1/107/19242795/107_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/86/1/107/19242795/107_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        6
      ]
    ],
    "date-time": "2024-02-06T23:40:53Z",
    "timestamp": 1707262853000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/86/1/107/489277/Two-dimensional-surface-band-structure-of"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1999,
        7,
        1
      ]
    ]
  },
  "references-count": 19,
  "journal-issue": {
    "issue": "1",
    "published-print": {
      "date-parts": [
        [
          1999,
          7,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.370706",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1999,
        7,
        1
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1999,
        7,
        1
      ]
    ]
  }
}