DOI: 10.1063/1.370577. Transient electron transport in wurtzite GaN, InN, and AlN

Transient electron transport in wurtzite GaN, InN, and AlN

10.1063/1.370577

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Transient electron transport and velocity overshoot in wurtzite GaN, InN, and AlN are examined and compared with that which occurs in GaAs. For all materials, we find that electron velocity overshoot only occurs when the electric field is increased to a value above a certain critical field, unique to each material. This critical field is strongly dependent on the material, about 4 kV/cm for the case of GaAs but much higher for the III–nitride semiconductors: 140 kV/cm for GaN, 65 kV/cm for InN, and 450 kV/cm for AlN. We find that InN exhibits the highest peak overshoot velocity and that this velocity overshoot lasts over the longest distances when compared with GaN and AlN. Finally, using a one-dimensional energy–momentum balance approach, a simple model is used to estimate the cutoff frequency performance of nitride based heterojunction field effect transistors (HFETs) and a comparison is made to recently fabricated AlGaN/GaN HFETs.

Bibliography

Foutz, B. E., OâLeary, S. K., Shur, M. S., & Eastman, L. F. (1999). Transient electron transport in wurtzite GaN, InN, and AlN. Journal of Applied Physics, 85(11), 7727â7734.

Authors 4

Brian E. Foutz (first)
Stephen K. O’Leary (additional)
Michael S. Shur (additional)
Lester F. Eastman (additional)

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:43 a.m.)
Deposited	1 year, 6 months ago (Feb. 7, 2024, 7:28 a.m.)
Indexed	1 month ago (Aug. 2, 2025, 12:28 a.m.)
Issued	26 years, 3 months ago (June 1, 1999)
Published	26 years, 3 months ago (June 1, 1999)
Published Print	26 years, 3 months ago (June 1, 1999)

Funders 0

None

BibTeX

@article{Foutz_1999, title={Transient electron transport in wurtzite GaN, InN, and AlN}, volume={85}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.370577}, DOI={10.1063/1.370577}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Foutz, Brian E. and O’Leary, Stephen K. and Shur, Michael S. and Eastman, Lester F.}, year={1999}, month=jun, pages={7727–7734} }

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