DOI: 10.1063/1.370549. X-ray response of epitaxial GaAs

10.1063/1.370549

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

We summarize the results of a number of x-ray experiments on an epitaxial GaAs device carried out in both our laboratory and the Physikalisch-Technishe Bundesanstalt radiometry Laboratory at the Berliner Elektronenspeicherring-Gesellschaft fur Synchrotronstrahlung Synchrotron Radiation Source. The detector has a diameter of 1.5 mm and is fully depleted to a depth of 40 μm. It has been characterized as a function of energy, bias, and temperature. At −35 °C we determine the charge collection efficiency to be 97% and find that energy resolutions ranging from 730 to 930 eV full width at half maximum (FWHM) can be readily achieved using conventional pre-amplifiers over the energy range 6–60 keV. By considering the various contributions to the FWHM, we show that leakage current and charge trapping noise dominate the resolution function. From detector modeling we determine the effective electron and hole density/cross section products to be 7 and 3 cm−1, respectively.

Bibliography

Owens, A., Bavdaz, M., Kraft, S., Peacock, A., Nenonen, S., Andersson, H., Gagliardi, M. A., Gagliardi, T., Scholze, F., & Ulm, G. (1999). X-ray response of epitaxial GaAs. Journal of Applied Physics, 85(11), 7522â7527.

Authors 10

A. Owens (first)
M. Bavdaz (additional)
S. Kraft (additional)
A. Peacock (additional)
S. Nenonen (additional)
H. Andersson (additional)
M. A. Gagliardi (additional)
T. Gagliardi (additional)
F. Scholze (additional)
G. Ulm (additional)

References 15 Referenced 23

10.1016/S0168-9002(97)00608-6 / Nucl. Instrum. Methods Phys. Res. A (1997)
{'key': '2024020707463219200_r2', 'first-page': '393', 'volume': '43', 'year': '1995', 'journal-title': 'Semicond. Semimet.'} / Semicond. Semimet. (1995)
10.1557/PROC-487-565 / Mater. Res. Soc. Symp. Proc. (1997)
10.1117/12.964916 / Proc. SPIE (1986)
10.1103/PhysRev.72.26 / Phys. Rev. (1947)
10.1016/0029-554X(71)90008-5 / Nucl. Instrum. Methods (1971)
{'key': '2024020707463219200_r7', 'first-page': '1387', 'volume': '36', 'year': '1967', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1967)
10.1016/0168-9002(85)90487-5 / Nucl. Instrum. Methods Phys. Res. A (1985)
10.1016/0168-9002(92)91224-W / Nucl. Instrum. Methods Phys. Res. A (1992)
{'key': '2024020707463219200_r10'}
10.1007/BF01338917 / Z. Phys. (1932)
10.1016/S0168-9002(98)00166-1 / Nucl. Instrum. Methods Phys. Res. A (1998)
10.1109/TNS.1997.9423928 / IEEE Trans. Nucl. Sci. (1997)
10.1016/0168-9002(94)90792-7 / Nucl. Instrum. Methods Phys. Res. A (1994)
10.1016/S0168-9002(98)00138-7 / Nucl. Instrum. Methods Phys. Res. A (1998)

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:54 a.m.)
Deposited	1 year, 6 months ago (Feb. 7, 2024, 7:53 a.m.)
Indexed	2 weeks, 1 day ago (Aug. 7, 2025, 4:33 p.m.)
Issued	26 years, 2 months ago (June 1, 1999)
Published	26 years, 2 months ago (June 1, 1999)
Published Print	26 years, 2 months ago (June 1, 1999)

Funders 0

None

BibTeX

@article{Owens_1999, title={X-ray response of epitaxial GaAs}, volume={85}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.370549}, DOI={10.1063/1.370549}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Owens, A. and Bavdaz, M. and Kraft, S. and Peacock, A. and Nenonen, S. and Andersson, H. and Gagliardi, M. A. and Gagliardi, T. and Scholze, F. and Ulm, G.}, year={1999}, month=jun, pages={7522–7527} }

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