Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

We investigate the integration of Al2O3 high-k dielectric on two-dimensional (2D) crystals of boron nitride (BN) and molybdenum disulfide (MoS2) by atomic layer deposition (ALD). We demonstrate the feasibility of direct ALD growth with trimethylaluminum and water as precursors on both 2D crystals. Through theoretical and experimental studies, we found that the initial ALD cycles play the critical role, during which physical adsorption dominates precursor adsorption at the crystal surface. We model the initial ALD growth stages at the 2D surface by analyzing Lennard-Jones potentials, which could guide future optimization of the ALD process on 2D crystals.

Bibliography

Liu, H., Xu, K., Zhang, X., & Ye, P. D. (2012). The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition. Applied Physics Letters, 100(15).

Authors 4
  1. Han Liu (first)
  2. Kun Xu (additional)
  3. Xujie Zhang (additional)
  4. Peide D. Ye (additional)
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Dates
Type When
Created 13 years, 4 months ago (April 13, 2012, 9:27 p.m.)
Deposited 2 years, 2 months ago (June 24, 2023, 4:35 a.m.)
Indexed 4 days, 2 hours ago (Aug. 23, 2025, 9:09 p.m.)
Issued 13 years, 4 months ago (April 9, 2012)
Published 13 years, 4 months ago (April 9, 2012)
Published Online 13 years, 4 months ago (April 13, 2012)
Published Print 13 years, 4 months ago (April 9, 2012)
Funders 0

None

@article{Liu_2012, title={The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition}, volume={100}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3703595}, DOI={10.1063/1.3703595}, number={15}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Liu, Han and Xu, Kun and Zhang, Xujie and Ye, Peide D.}, year={2012}, month=apr }