Abstract
We investigate the integration of Al2O3 high-k dielectric on two-dimensional (2D) crystals of boron nitride (BN) and molybdenum disulfide (MoS2) by atomic layer deposition (ALD). We demonstrate the feasibility of direct ALD growth with trimethylaluminum and water as precursors on both 2D crystals. Through theoretical and experimental studies, we found that the initial ALD cycles play the critical role, during which physical adsorption dominates precursor adsorption at the crystal surface. We model the initial ALD growth stages at the 2D surface by analyzing Lennard-Jones potentials, which could guide future optimization of the ALD process on 2D crystals.
References
27
Referenced
140
{'volume': '2007', 'journal-title': 'Tech. Dig. - Int. Electron Devices Meet.', 'first-page': '247', 'key': '2023062318185050100_c1'}
/ Tech. Dig. - Int. Electron Devices Meet.10.1109/LED.2002.801319
/ IEEE Electron Devices Lett. (2008)10.1109/LED.2008.917817
/ IEEE Electron Devices Lett. (2008){'volume': '2010', 'journal-title': 'Tech. Dig. - Int. Electron Devices Meet.', 'first-page': '138', 'key': '2023062318185050100_c4'}
/ Tech. Dig. - Int. Electron Devices Meet.10.1109/LED.2011.2106107
/ IEEE Electron Devices Lett. (2011)10.1073/pnas.0502848102
/ Proc. Natl. Acad. Sci. U.S.A. (2005)10.1038/nature04233
/ Nature (2005)10.1038/nature04235
/ Nature (2005)10.1103/PhysRevLett.102.195505
/ Phys. Rev. Lett. (2009)10.1038/nphys1270
/ Nat. Phys. (2009)10.1038/nnano.2010.279
/ Nat. Nanotechnol. (2011)10.1063/1.2828338
/ Appl. Phys. Lett. (2008)10.1021/ja8023059
/ J. Am. Chem. Soc. (2008)10.1063/1.3622306
/ Appl. Phys. Lett. (2011)10.1021/jp904321n
/ J. Phys. Chem. C (2009)10.1038/nnano.2010.172
/ Nat. Nanotechnol. (2010)10.1109/LED.2012.2184520
/ IEEE Electron Device Lett. (2012)10.1016/j.patrec.2006.03.009
/ Pattern Recogn. Lett. (2006)10.1021/ct0502763
/ J. Chem. Theory Comput. (2006)10.1039/b316209e
/ Phys. Chem. Chem. Phys. (2004)10.1073/pnas.0501030102
/ Proc. Natl. Acad. Sci. U.S.A. (2005)10.1021/jp110669p
/ J. Phys. Chem. C (2011)10.1021/cr900056b
/ Chem. Rev. (2010)10.1063/1.3077021
/ Appl. Phys. Lett. (2009)10.1063/1.3254329
/ Appl. Phys. Lett. (2009)10.1063/1.2928228
/ Appl. Phys. Lett. (2008){'key': '2023062318185050100_c27', 'first-page': '342', 'volume-title': 'Semiconductor Material and Device Charaterization', 'year': '2006', 'edition': '3rd ed.'}
/ Semiconductor Material and Device Charaterization (2006)
Dates
Type | When |
---|---|
Created | 13 years, 4 months ago (April 13, 2012, 9:27 p.m.) |
Deposited | 2 years, 2 months ago (June 24, 2023, 4:35 a.m.) |
Indexed | 4 days, 2 hours ago (Aug. 23, 2025, 9:09 p.m.) |
Issued | 13 years, 4 months ago (April 9, 2012) |
Published | 13 years, 4 months ago (April 9, 2012) |
Published Online | 13 years, 4 months ago (April 13, 2012) |
Published Print | 13 years, 4 months ago (April 9, 2012) |
@article{Liu_2012, title={The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition}, volume={100}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3703595}, DOI={10.1063/1.3703595}, number={15}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Liu, Han and Xu, Kun and Zhang, Xujie and Ye, Peide D.}, year={2012}, month=apr }