DOI: 10.1063/1.369932. Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)

Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)

10.1063/1.369932

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Exchange biased magnetic tunnel junction (MTJ) structures are shown to have useful properties for forming magnetic memory storage elements in a novel cross-point architecture. MTJ elements have been developed which exhibit very large magnetoresistive (MR) values exceeding 40% at room temperature, with specific resistance values ranging down to as little as ∼60 Ω(μm)2, and with MR values enhanced by moderate thermal treatments. Large MR values are observed in magnetic elements with areas as small as 0.17 (μm)2. The magnetic field dependent current–voltage characteristics of an MTJ element integrated with a silicon diode are analyzed to extract the MR properties of the MTJ element itself.

Bibliography

Parkin, S. S. P., Roche, K. P., Samant, M. G., Rice, P. M., Beyers, R. B., Scheuerlein, R. E., OâSullivan, E. J., Brown, S. L., Bucchigano, J., Abraham, D. W., Lu, Y., Rooks, M., Trouilloud, P. L., Wanner, R. A., & Gallagher, W. J. (1999). Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited). Journal of Applied Physics, 85(8), 5828â5833.

Authors 15

S. S. P. Parkin (first)
K. P. Roche (additional)
M. G. Samant (additional)
P. M. Rice (additional)
R. B. Beyers (additional)
R. E. Scheuerlein (additional)
E. J. O’Sullivan (additional)
S. L. Brown (additional)
J. Bucchigano (additional)
D. W. Abraham (additional)
Yu Lu (additional)
M. Rooks (additional)
P. L. Trouilloud (additional)
R. A. Wanner (additional)
W. J. Gallagher (additional)

References 26 Referenced 1,067

{'key': '2024020617522521000_r1'}
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Dates

Type	When
Created	23 years ago (July 26, 2002, 9:55 a.m.)
Deposited	1 year, 6 months ago (Feb. 6, 2024, 5:41 p.m.)
Indexed	2 weeks ago (Aug. 7, 2025, 4:51 a.m.)
Issued	26 years, 4 months ago (April 15, 1999)
Published	26 years, 4 months ago (April 15, 1999)
Published Print	26 years, 4 months ago (April 15, 1999)

Funders 0

None

BibTeX

@article{Parkin_1999, title={Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)}, volume={85}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.369932}, DOI={10.1063/1.369932}, number={8}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Parkin, S. S. P. and Roche, K. P. and Samant, M. G. and Rice, P. M. and Beyers, R. B. and Scheuerlein, R. E. and O’Sullivan, E. J. and Brown, S. L. and Bucchigano, J. and Abraham, D. W. and Lu, Yu and Rooks, M. and Trouilloud, P. L. and Wanner, R. A. and Gallagher, W. J.}, year={1999}, month=apr, pages={5828–5833} }

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