DOI: 10.1063/1.369554. Reduction of the energy gap pressure coefficient of GaN due to the constraining presence of the sapphire substrate

Reduction of the energy gap pressure coefficient of GaN due to the constraining presence of the sapphire substrate

10.1063/1.369554

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

We have performed a detailed investigation of the photoluminescence pressure dependence of heteroepitaxial GaN thin films on sapphire substrates. A comparison between as grown GaN on sapphire and free-standing GaN membranes, created using a laser assisted substrate liftoff process, revealed that the presence of the sapphire substrate leads to an energy gap pressure coefficient reduction of approximately 5%. This result agrees with the numerical simulations presented in this article. We established that the linear pressure coefficient of free-standing GaN is 41.4±0.2 meV/GPa, and that the deformation potential of the energy gap is −9.36±0.04 eV. Our results also suggest a new, lower value of the pressure derivative for the bulk modulus of GaN (B′=3.5).

Bibliography

Perlin, P., Mattos, L., Shapiro, N. A., Kruger, J., Wong, W. S., Sands, T., Cheung, N. W., & Weber, E. R. (1999). Reduction of the energy gap pressure coefficient of GaN due to the constraining presence of the sapphire substrate. Journal of Applied Physics, 85(4), 2385â2389.

Authors 8

Piotr Perlin (first)
Laila Mattos (additional)
Noad A. Shapiro (additional)
Joachim Kruger (additional)
William S. Wong (additional)
Tim Sands (additional)
Nathan W. Cheung (additional)
Eicke R. Weber (additional)

References 20 Referenced 88

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10.1063/1.358916 / J. Appl. Phys. (1995)
10.1063/1.114635 / Appl. Phys. Lett. (1995)
10.1063/1.113774 / Appl. Phys. Lett. (1995)
10.1063/1.1659792 / J. Appl. Phys. (1971)
10.1103/PhysRevB.45.13307 / Phys. Rev. B (1992)
10.1063/1.326625 / J. Appl. Phys. (1979)
10.1063/1.361236 / J. Appl. Phys. (1996)
{'key': '2024020607230916100_r10', 'first-page': '599', 'volume': '72', 'year': '1997', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1997)
{'key': '2024020607230916100_r11'}
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{'key': '2024020607230916100_r13', 'first-page': '985', 'volume': '66', 'year': '1994', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1994)
10.1103/PhysRevB.45.11929 / Phys. Rev. B (1992)
{'key': '2024020607230916100_r15', 'first-page': '2452', 'volume': '48', 'year': '1993', 'journal-title': 'Phys. Rev. B'} / Phys. Rev. B (1993)
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10.1088/0268-1242/9/12/013 / Semicond. Sci. Technol. (1994)
10.1103/PhysRevB.45.83 / Phys. Rev. B (1992)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:41 a.m.)
Deposited	1 year, 6 months ago (Feb. 6, 2024, 2:50 a.m.)
Indexed	1 month, 1 week ago (July 16, 2025, 9:50 a.m.)
Issued	26 years, 6 months ago (Feb. 15, 1999)
Published	26 years, 6 months ago (Feb. 15, 1999)
Published Print	26 years, 6 months ago (Feb. 15, 1999)

Funders 0

None

BibTeX

@article{Perlin_1999, title={Reduction of the energy gap pressure coefficient of GaN due to the constraining presence of the sapphire substrate}, volume={85}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.369554}, DOI={10.1063/1.369554}, number={4}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Perlin, Piotr and Mattos, Laila and Shapiro, Noad A. and Kruger, Joachim and Wong, William S. and Sands, Tim and Cheung, Nathan W. and Weber, Eicke R.}, year={1999}, month=feb, pages={2385–2389} }

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