DOI: 10.1063/1.369426. Comparison of Cu gettering to H+ and He+ implantation-induced cavities in separation-by-implantation-of-oxygen wafers

Comparison of Cu gettering to H+ and He+ implantation-induced cavities in separation-by-implantation-of-oxygen wafers

10.1063/1.369426

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Well-defined bands of cavities have been formed beneath the buried oxide (BOX) layer of two sets of separation-by-implantation-of-oxygen (SIMOX) wafers by H+ and He+ implantation. The gettering of Cu impurities, which were implanted into the top Si layer at different doses (5×1013, 5×1014, and 5×1015/cm2), to the cavities has been studied by secondary ion mass spectroscopy and cross-sectional transmission electron microscopy. The results indicated that the cavities induced either by H+ or He+ implantation are effective gettering centers for Cu in SIMOX wafers, and up to 4×1015/cm2 Cu has diffused through the BOX layer and been captured by the cavities. The gettering efficiency of cavities increases with the decrease of Cu implantation doses and the increase of annealing temperatures. He+ ion implantation is found to be more suitable for cavity formation and impurity gettering than H+ ion implantation.

Bibliography

Zhang, M., Lin, C., Duo, X., Lin, Z., & Zhou, Z. (1999). Comparison of Cu gettering to H+ and He+ implantation-induced cavities in separation-by-implantation-of-oxygen wafers. Journal of Applied Physics, 85(1), 94â98.

Authors 5

Miao Zhang (first)
Chenglu Lin (additional)
Xinzhong Duo (additional)
Zixin Lin (additional)
Zuyao Zhou (additional)

References 18 Referenced 16

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:54 a.m.)
Deposited	1 year, 6 months ago (Feb. 10, 2024, 10:32 a.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 11:10 a.m.)
Issued	26 years, 8 months ago (Jan. 1, 1999)
Published	26 years, 8 months ago (Jan. 1, 1999)
Published Print	26 years, 8 months ago (Jan. 1, 1999)

Funders 0

None

BibTeX

@article{Zhang_1999, title={Comparison of Cu gettering to H+ and He+ implantation-induced cavities in separation-by-implantation-of-oxygen wafers}, volume={85}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.369426}, DOI={10.1063/1.369426}, number={1}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Zhang, Miao and Lin, Chenglu and Duo, Xinzhong and Lin, Zixin and Zhou, Zuyao}, year={1999}, month=jan, pages={94–98} }

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