Abstract
To obtain magnetic tunnel junctions (MTJs) composed of non-equilibrium alloy, Co2FeSn films were prepared by atomically controlled alternate deposition at various substrate temperatures. X-ray diffraction patterns and Mössbauer spectra clarify that Co2FeSn films in the Heusler alloy phase can be realized by growing at a substrate temperature of 250 °C or below. Phase separation into cubic CoSn, hexagonal CoSn and cubic CoFe phases occurs in films grown at substrate temperatures 300 °C or greater. Fe/MgO/Co2FeSn MTJs were prepared with the Co2FeSn layer grown at various substrate temperatures. The MTJs with the ferromagnetic Co2FeSn layer grown at a substrate temperature of 250 °C showed tunnel magnetoresistance ratios of 72.2% and 43.5% at 2 K and 300 K, respectively.
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Dates
Type | When |
---|---|
Created | 13 years, 5 months ago (March 5, 2012, 8:38 a.m.) |
Deposited | 2 years, 1 month ago (July 3, 2023, 7:16 p.m.) |
Indexed | 4 weeks ago (July 30, 2025, 6:58 a.m.) |
Issued | 13 years, 5 months ago (March 1, 2012) |
Published | 13 years, 5 months ago (March 1, 2012) |
Published Online | 13 years, 5 months ago (March 1, 2012) |
Published Print | 13 years, 5 months ago (March 1, 2012) |
@article{Tanaka_2012, title={Preparation of Co2FeSn Heusler alloy films and magnetoresistance of Fe/MgO/Co2FeSn magnetic tunnel junctions}, volume={111}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.3688324}, DOI={10.1063/1.3688324}, number={5}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Tanaka, M. A. and Ishikawa, Y. and Wada, Y. and Hori, S. and Murata, A. and Horii, S. and Yamanishi, Y. and Mibu, K. and Kondou, K. and Ono, T. and Kasai, S.}, year={2012}, month=mar }