DOI: 10.1063/1.368775. Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy

Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy

10.1063/1.368775

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Selective growth of arrays of silicon-doped GaN (Si:GaN) pyramids for field emitter applications has been achieved. The electron emission characteristics of these arrays has been measured using techniques such as field emission, field emission energy distribution analysis (FEED), photoemission electron microscopy (PEEM), and field emission electron microscopy (FEEM). The field emission current–voltage (I–V) results indicate an average threshold field as low as 7 V/μm for an emission current of 10 nA. It is suggested that the low threshold field value is a consequence of both the low work function of Si:GaN and the field enhancement of the pyramids. The results of the FEEM and FEED measurements indicate agreement with the field emission I–V characteristics. The FEED results indicate that the Si:GaN pyramids are conducting, and that no significant ohmic losses are present between the top contact to the array and the field emitting pyramids. The PEEM and FEEM images show that the emission from the arrays is uniform over a 150 μm field of view.

Bibliography

Ward, B. L., Nam, O.-H., Hartman, J. D., English, S. L., McCarson, B. L., Schlesser, R., Sitar, Z., Davis, R. F., & Nemanich, R. J. (1998). Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy. Journal of Applied Physics, 84(9), 5238â5242.

Authors 9

B. L. Ward (first)
O.-H. Nam (additional)
J. D. Hartman (additional)
S. L. English (additional)
B. L. McCarson (additional)
R. Schlesser (additional)
Z. Sitar (additional)
R. F. Davis (additional)
R. J. Nemanich (additional)

References 17 Referenced 66

10.1063/1.114642 / Appl. Phys. Lett. (1995)
10.1016/S0169-4332(96)00186-9 / Appl. Surf. Sci. (1996)
10.1143/JJAP.34.L1184 / Jpn. J. Appl. Phys., Part 2 (1995)
10.1016/S0038-1101(96)00209-2 / Solid-State Electron. (1997)
10.1016/S0022-0248(96)00620-3 / J. Cryst. Growth (1997)
10.1143/JJAP.36.L532 / Jpn. J. Appl. Phys., Part 2 (1997)
{'key': '2024020615033230400_r7', 'first-page': '107', 'article-title': 'III–V Nitrides', 'volume-title': 'Mater. Res. Soc. Symp. Proc.', 'author': 'Ponce', 'year': '1997'} / Mater. Res. Soc. Symp. Proc. / III–V Nitrides by Ponce (1997)
{'key': '2024020615033230400_r8'}
10.1063/1.112184 / Appl. Phys. Lett. (1994)
{'key': '2024020615033230400_r10'}
10.1063/1.366442 / J. Appl. Phys. (1997)
{'key': '2024020615033230400_r12'}
{'key': '2024020615033230400_r13', 'first-page': '1', 'volume': '119', 'year': '1991', 'journal-title': 'Inst. Phys. Conf. Ser.'} / Inst. Phys. Conf. Ser. (1991)
10.1016/0304-3991(83)90238-3 / Ultramicroscopy (1983)
10.1016/0304-3991(93)90007-K / Ultramicroscopy (1993)
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10.1111/j.1365-2818.1972.tb03739.x / J. Microsc. (1972)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:46 a.m.)
Deposited	1 year, 6 months ago (Feb. 6, 2024, 10:18 a.m.)
Indexed	1 year, 2 months ago (June 14, 2024, 9:51 a.m.)
Issued	26 years, 9 months ago (Nov. 1, 1998)
Published	26 years, 9 months ago (Nov. 1, 1998)
Published Print	26 years, 9 months ago (Nov. 1, 1998)

Funders 0

None

BibTeX

@article{Ward_1998, title={Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy}, volume={84}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.368775}, DOI={10.1063/1.368775}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Ward, B. L. and Nam, O.-H. and Hartman, J. D. and English, S. L. and McCarson, B. L. and Schlesser, R. and Sitar, Z. and Davis, R. F. and Nemanich, R. J.}, year={1998}, month=nov, pages={5238–5242} }

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