DOI: 10.1063/1.368562. Properties of molecular-beam epitaxy-grown GaNAs from optical spectroscopy

Properties of molecular-beam epitaxy-grown GaNAs from optical spectroscopy

10.1063/1.368562

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

GaN x As 1−x layers with different nitrogen concentrations x grown on (001)GaAs substrates by molecular-beam epitaxy have been studied by photoluminescence, optical absorption, and Raman spectroscopy. The content of nitrogen in the layers was determined by x-ray diffraction and secondary-ion-mass spectrometry. The samples can be classified in three categories with respect to the concentration of N: with doping nitrogen concentration, with average content of N less than 0.3, and with x close to 1. From optical measurements and from analysis of x-ray diffraction spectra, different phases are observed in the GaNxAs1−x layers: GaAs, GaN, and the solid ternary solution GaNxAs1−x. In Raman spectra both GaAs-like and GaN-like optical phonons are observed. We have estimated the fundamental band-gap energy in the GaNxAs1−x alloy with low nitrogen concentration up to x=0.04 from absorption measurements, and in GaNxAs1−x with high nitrogen concentration x&gt;0.96 from photoluminescence spectra. Fitting of the experimental data for low x values gives a constant bowing parameter as big as b=−18 eV. This value predicts the band-gap energy for the high nitrogen concentration in agreement with experimental data. Consequently, GaNxAs1−x is predicted to be semimetallic in the range 0.12&lt;x&lt;0.75.

Bibliography

Pozina, G., Ivanov, I., Monemar, B., Thordson, J. V., & Andersson, T. G. (1998). Properties of molecular-beam epitaxy-grown GaNAs from optical spectroscopy. Journal of Applied Physics, 84(7), 3830â3835.

Authors 5

G. Pozina (first)
I. Ivanov (additional)
B. Monemar (additional)
J. V. Thordson (additional)
T. G. Andersson (additional)

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:54 a.m.)
Deposited	1 year, 6 months ago (Feb. 6, 2024, 1:53 a.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 11:04 a.m.)
Issued	26 years, 11 months ago (Oct. 1, 1998)
Published	26 years, 11 months ago (Oct. 1, 1998)
Published Print	26 years, 11 months ago (Oct. 1, 1998)

Funders 0

None

BibTeX

@article{Pozina_1998, title={Properties of molecular-beam epitaxy-grown GaNAs from optical spectroscopy}, volume={84}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.368562}, DOI={10.1063/1.368562}, number={7}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Pozina, G. and Ivanov, I. and Monemar, B. and Thordson, J. V. and Andersson, T. G.}, year={1998}, month=oct, pages={3830–3835} }

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  "abstract": "<jats:p>GaN x As 1\u2212x layers with different nitrogen concentrations x grown on (001)GaAs substrates by molecular-beam epitaxy have been studied by photoluminescence, optical absorption, and Raman spectroscopy. The content of nitrogen in the layers was determined by x-ray diffraction and secondary-ion-mass spectrometry. The samples can be classified in three categories with respect to the concentration of N: with doping nitrogen concentration, with average content of N less than 0.3, and with x close to 1. From optical measurements and from analysis of x-ray diffraction spectra, different phases are observed in the GaNxAs1\u2212x layers: GaAs, GaN, and the solid ternary solution GaNxAs1\u2212x. In Raman spectra both GaAs-like and GaN-like optical phonons are observed. We have estimated the fundamental band-gap energy in the GaNxAs1\u2212x alloy with low nitrogen concentration up to x=0.04 from absorption measurements, and in GaNxAs1\u2212x with high nitrogen concentration x&amp;gt;0.96 from photoluminescence spectra. Fitting of the experimental data for low x values gives a constant bowing parameter as big as b=\u221218\u2009eV. This value predicts the band-gap energy for the high nitrogen concentration in agreement with experimental data. Consequently, GaNxAs1\u2212x is predicted to be semimetallic in the range 0.12&amp;lt;x&amp;lt;0.75.</jats:p>",
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