DOI: 10.1063/1.368477. Energy-level alignment at interfaces between metals and the organic semiconductor 4,4′-N,N′-dicarbazolyl-biphenyl

Energy-level alignment at interfaces between metals and the organic semiconductor 4,4′-N,N′-dicarbazolyl-biphenyl

10.1063/1.368477

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

We have used ultraviolet photoemission spectroscopy to study the formation of interfaces between the organic semiconductor, 4,4′-N,N′-dicarbazolyl-biphenyl (CBP), and the metals Au, Ag, and Mg. Each interface was studied by depositing the organic on the metal, and by depositing the metal on the organic. The two methods produced inequivalent interfaces, except in the case of Au/CBP. The position of the highest occupied molecular orbital relative to the Fermi level and the magnitude of the interface dipole were measured for each interface. The barrier to electron injection from each metal was estimated using the magnitude of the measured optical gap. An interface dipole, of magnitude nearly independent of the metal work function, was formed when CBP was deposited on a metal surface. The position of the Fermi level within the CBP gap was found to vary strongly with the metal work function.

Bibliography

Hill, I. G., Rajagopal, A., & Kahn, A. (1998). Energy-level alignment at interfaces between metals and the organic semiconductor 4,4â²-N,Nâ²-dicarbazolyl-biphenyl. Journal of Applied Physics, 84(6), 3236â3241.

Authors 3

I. G. Hill (first)
A. Rajagopal (additional)
A. Kahn (additional)

References 15 Referenced 102

10.1021/cr941014o / Chem. Rev. (1997)
{'key': '2024021008125087400_r2'}
10.1063/1.119392 / Appl. Phys. Lett. (1997)
10.1063/1.116465 / Appl. Phys. Lett. (1996)
10.1016/S0169-4332(96)00886-0 / Appl. Surf. Sci. (1997)
{'key': '2024021008125087400_r6', 'first-page': '13', 'volume': '54', 'year': '1996', 'journal-title': 'Phys. Rev. B'} / Phys. Rev. B (1996)
10.1063/1.119325 / Appl. Phys. Lett. (1997)
10.1016/S0379-6779(97)04010-1 / Synth. Met. (1997)
{'key': '2024021008125087400_r9'}
10.1109/16.605471 / IEEE Trans. Electron Devices (1997)
10.1063/1.121940 / Appl. Phys. Lett. (1998)
10.1063/1.368035 / J. Appl. Phys. (1998)
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10.1063/1.118594 / Appl. Phys. Lett. (1997)
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:54 a.m.)
Deposited	1 year, 6 months ago (Feb. 10, 2024, 4:59 a.m.)
Indexed	1 year, 3 months ago (May 5, 2024, 7:51 a.m.)
Issued	26 years, 11 months ago (Sept. 15, 1998)
Published	26 years, 11 months ago (Sept. 15, 1998)
Published Print	26 years, 11 months ago (Sept. 15, 1998)

Funders 0

None

BibTeX

@article{Hill_1998, title={Energy-level alignment at interfaces between metals and the organic semiconductor 4,4′-N,N′-dicarbazolyl-biphenyl}, volume={84}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.368477}, DOI={10.1063/1.368477}, number={6}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Hill, I. G. and Rajagopal, A. and Kahn, A.}, year={1998}, month=sep, pages={3236–3241} }

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