Crossref journal-article
AIP Publishing
Journal of Applied Physics (317)
Abstract

The paper discusses nitrogen engineering of ultrathin (<5 nm) oxynitride gate dielectrics. The dielectric film that we have aimed for has two nitrogen enhanced layers: one at the SiO2/polysilicon interface to retard boron diffusion from the gate, and a smaller one peaked at the Si/SiO2 interface to increase the hot electron degradation resistance. We were able to produce this dielectric by a thermal (NO/O2/NO) process, aided by an understanding of the kinetics and thermodynamics of nitrogen incorporation in SiO2.

Bibliography

Gusev, E. P., Lu, H. C., Garfunkel, E., Gustafsson, T., Green, M. L., Brasen, D., & Lennard, W. N. (1998). Nitrogen engineering of ultrathin oxynitrides by a thermal NO/O2/NO process. Journal of Applied Physics, 84(5), 2980–2982.

Authors 7
  1. E. P. Gusev (first)
  2. H. C. Lu (additional)
  3. E. Garfunkel (additional)
  4. T. Gustafsson (additional)
  5. M. L. Green (additional)
  6. D. Brasen (additional)
  7. W. N. Lennard (additional)
References 37 Referenced 43
  1. 10.1063/1.103550 / Appl. Phys. Lett. (1990)
  2. 10.1143/JJAP.29.L2333 / J. Appl. Phys. (1990)
  3. 10.1109/16.108220 / IEEE Trans. Electron Devices (1992)
  4. 10.1063/1.109749 / Appl. Phys. Lett. (1993)
  5. 10.1063/1.353438 / J. Appl. Phys. (1993)
  6. 10.1063/1.356374 / J. Appl. Phys. (1994)
  7. 10.1063/1.113244 / Appl. Phys. Lett. (1995)
  8. 10.1063/1.113775 / Appl. Phys. Lett. (1995)
  9. 10.1109/16.502134 / IEEE Trans. Electron Devices (1996)
  10. 10.1109/16.535320 / IEEE Trans. Electron Devices (1996)
  11. 10.1016/S0167-9317(97)00050-6 / Microelectron. Eng. (1997)
  12. 10.1016/S0167-9317(97)00007-5 / Microelectron. Eng. (1997)
  13. 10.1063/1.112980 / Appl. Phys. Lett. (1994)
  14. 10.1063/1.114633 / Appl. Phys. Lett. (1995)
  15. 10.1063/1.115909 / Appl. Phys. Lett. (1996)
  16. 10.1063/1.111533 / Appl. Phys. Lett. (1994)
  17. 10.1063/1.113461 / Appl. Phys. Lett. (1995)
  18. 10.1063/1.360036 / J. Appl. Phys. (1995)
  19. 10.1063/1.117687 / Appl. Phys. Lett. (1996)
  20. 10.1063/1.365858 / J. Appl. Phys. (1997)
  21. 10.1016/S0167-9317(97)00010-5 / Microelectron. Eng. (1997)
  22. 10.1063/1.118389 / Appl. Phys. Lett. (1997)
  23. 10.1063/1.115595 / Appl. Phys. Lett. (1996)
  24. 10.1063/1.113665 / Appl. Phys. Lett. (1995)
  25. 10.1063/1.116135 / Appl. Phys. Lett. (1996)
  26. {'key': '2023071204000671900_r26'}
  27. 10.1063/1.110870 / Appl. Phys. Lett. (1994)
  28. 10.1103/PhysRevB.52.1759 / Phys. Rev. B (1995)
  29. 10.1149/1.1836712 / J. Electrochem. Soc. (1996)
  30. 10.1063/1.349701 / J. Appl. Phys. (1991)
  31. 10.1063/1.114952 / Appl. Phys. Lett. (1995)
  32. 10.1063/1.365264 / J. Appl. Phys. (1997)
  33. 10.1063/1.108633 / Appl. Phys. Lett. (1993)
  34. {'key': '2023071204000671900_r34'}
  35. 10.1109/16.477588 / IEEE Trans. Electron Devices (1996)
  36. 10.1116/1.580165 / J. Vac. Sci. Technol. A (1996)
  37. {'key': '2023071204000671900_r36a'}
Dates
Type When
Created 23 years ago (July 26, 2002, 8:39 a.m.)
Deposited 2 years, 1 month ago (July 12, 2023, 12:07 a.m.)
Indexed 1 year, 6 months ago (Feb. 11, 2024, 12:30 a.m.)
Issued 26 years, 11 months ago (Sept. 1, 1998)
Published 26 years, 11 months ago (Sept. 1, 1998)
Published Print 26 years, 11 months ago (Sept. 1, 1998)
Funders 0

None

@article{Gusev_1998, title={Nitrogen engineering of ultrathin oxynitrides by a thermal NO/O2/NO process}, volume={84}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.368435}, DOI={10.1063/1.368435}, number={5}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Gusev, E. P. and Lu, H. C. and Garfunkel, E. and Gustafsson, T. and Green, M. L. and Brasen, D. and Lennard, W. N.}, year={1998}, month=sep, pages={2980–2982} }