Abstract
The paper discusses nitrogen engineering of ultrathin (<5 nm) oxynitride gate dielectrics. The dielectric film that we have aimed for has two nitrogen enhanced layers: one at the SiO2/polysilicon interface to retard boron diffusion from the gate, and a smaller one peaked at the Si/SiO2 interface to increase the hot electron degradation resistance. We were able to produce this dielectric by a thermal (NO/O2/NO) process, aided by an understanding of the kinetics and thermodynamics of nitrogen incorporation in SiO2.
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Dates
Type | When |
---|---|
Created | 23 years ago (July 26, 2002, 8:39 a.m.) |
Deposited | 2 years, 1 month ago (July 12, 2023, 12:07 a.m.) |
Indexed | 1 year, 6 months ago (Feb. 11, 2024, 12:30 a.m.) |
Issued | 26 years, 11 months ago (Sept. 1, 1998) |
Published | 26 years, 11 months ago (Sept. 1, 1998) |
Published Print | 26 years, 11 months ago (Sept. 1, 1998) |
@article{Gusev_1998, title={Nitrogen engineering of ultrathin oxynitrides by a thermal NO/O2/NO process}, volume={84}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.368435}, DOI={10.1063/1.368435}, number={5}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Gusev, E. P. and Lu, H. C. and Garfunkel, E. and Gustafsson, T. and Green, M. L. and Brasen, D. and Lennard, W. N.}, year={1998}, month=sep, pages={2980–2982} }