Abstract
The crystal and electronic band structures of CuxS(1.25 < x ≤ 2) are systematically studied using the density-functional theory method. For Cu2S, all the three chalcocite phases, i.e., the low-chalcocite, the high-chalcocite, and the cubic-chalcocite phases have direct band gaps around 1.3–1.5 eV, with the low-chalcocite being the most stable one. However, Cu vacancies can form spontaneously in these compounds, causing instability of Cu2S. We find that under Cu-rich condition, the anilite Cu1.75S is the most stable structure. It has a predicted band gap of 1.4 eV and could a promising solar cell absorber.
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Dates
Type | When |
---|---|
Created | 13 years, 6 months ago (Feb. 9, 2012, 3:52 p.m.) |
Deposited | 2 years, 1 month ago (July 5, 2023, 5:05 p.m.) |
Indexed | 1 day, 23 hours ago (Aug. 21, 2025, 2:15 p.m.) |
Issued | 13 years, 6 months ago (Feb. 6, 2012) |
Published | 13 years, 6 months ago (Feb. 6, 2012) |
Published Online | 13 years, 6 months ago (Feb. 8, 2012) |
Published Print | 13 years, 6 months ago (Feb. 6, 2012) |
@article{Xu_2012, title={Crystal and electronic structures of CuxS solar cell absorbers}, volume={100}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3682503}, DOI={10.1063/1.3682503}, number={6}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Xu, Qiang and Huang, Bing and Zhao, Yufeng and Yan, Yanfa and Noufi, Rommel and Wei, Su-Huai}, year={2012}, month=feb }